Datasheet

1N4454
1N4454
DO-35
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
Working Inverse Voltage 50 V
I
O
Average Rectified Current 200 mA
I
F
DC Forward Current 400 mA
i
f
Recurrent Peak Forward Current 600 mA
i
f(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
T
stg
Storage Temperature Range -65 to +200
°C
T
J
Operating Junction Temperature 175 °C
Symbol Characteristic Max Units
1N4454
P
D
Total Device Dissipation
Derate above 25°C
500
3.33
mW
mW/°C
R
θ
JA
Thermal Resistance, Junction to Ambient 300
°C/W
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation