Datasheet

3
2N4401 / MMBT4401
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(
BR
)
CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0 mA, I
B
= 0 40 V
V
(
BR
)
CBO
Collector-Base Breakdown Voltage I
C
= 0.1 mA, I
E
= 0 60 V
V
(
BR
)
EBO
Emitter-Base Breakdown Voltage I
E
= 0.1 mA, I
C
= 0 6.0 V
I
BL
Base Cutoff Current V
CE
= 35 V, V
EB
= 0.4 V 0.1
µ
A
I
CEX
Collector Cutoff Current V
CE
= 35 V, V
EB
= 0.4 V 0.1
µ
A
ON CHARACTERISTICS*
h
FE
DC Current Gain I
C
= 0.1 mA, V
CE
= 1.0 V
I
C
= 1.0 mA, V
CE
= 1.0 V
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 2.0 V
20
40
80
100
40
300
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.4
0.75
V
V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
0.75 0.95
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product I
C
= 20 mA, V
CE
= 10 V,
f = 100 MHz
250 MHz
C
cb
Collector-Base Capacitance V
CB
= 5.0 V, I
E
= 0,
f = 140 kHz
6.5 pF
C
eb
Emitter-Base Capacitance V
BE
= 0.5 V, I
C
= 0,
f = 140 kHz
30 pF
h
ie
Input Impedance I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.0 15
k
Ω
h
re
Voltage Feedback Ratio I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
0.1 8.0
x 10
-4
h
fe
Small-Signal Current Gain I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
40 500
h
oe
Output Admittance I
C
= 1.0 mA, V
CE
= 10 V,
f = 1.0 kHz
1.0 30
µ
mhos
SWITCHING CHARACTERISTICS
t
d
Delay Time V
CC
= 30 V, V
E
B
= 2 V, 15 ns
t
r
Rise Time I
C
= 150 mA, I
B1
= 15 mA 20 ns
t
s
Storage Time V
CC
= 30 V, I
C
= 150 mA 225 ns
t
f
Fall Time I
B1
= I
B2
= 15 mA 30 ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Symbol Parameter Test Conditions Min Max Units
NPN General Purpose Amplifier
(continued)