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NPN General Pupose Amplifier

This device is designed for use as a medium power amplifier and

switch requiring collector currents up to 500 mA.

MMBT44012N4401

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 40 V

CBO

Collector-Base Voltage 60 V

EBO

Emitter-Base Voltage 6.0 V

Collector Current - Continuous 600 mA

, T

Operating and Storage Junction Temperature Range -55 to +150

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N4401 *MMBT4401

Total Device Dissipation

Derate above 25

625

5.0

350

2.8

mW/

Thermal Resistance, Junction to Case 83.3

C/W

Thermal Resistance, Junction to Ambient 200 357

C/W

TO-92

SOT-23

Mark: 2X

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

 2001 Fairchild Semiconductor Corporation

2N4401 / MMBT4401

2N4401/MMBT4401, Rev A

Summary of content (7 pages)

PAGE 1
2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.
PAGE 2
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 60 V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V IBL Base Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 µA ICEX Collector Cutoff Current VCE = 35 V, VEB = 0.4 V 0.
PAGE 3
(continued) V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 Base-Emitter Saturation Voltage vs Collector Current β = 10 1 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) 500 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) 500 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current V BESAT - BASE-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0.
PAGE 4
(continued) Typical Characteristics (continued) Turn On and Turn Off Times vs Collector Current 400 I B1 = I B2 = Switching Times vs Collector Current 400 Ic 320 TIME (nS) V cc = 25 V 240 160 240 ts 160 tr t off 80 tf 80 t on td 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 100 I C - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TIME (nS) 10 320 V cc = 25 V 0 10 Ic I B1 = I B2 = 10 SOT-223 0.75 TO-92 0.5 SOT-23 0.
PAGE 5
(continued) V CE = 10 V T A = 25oC 6 hoe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 CHAR. RELATIVE TO VALUES AT TA = 25oC Common Emitter Characteristics 8 CHAR. RELATIVE TO VALUES AT VCE = 10V CHAR. RELATIVE TO VALUES AT I C= 10mA Typical Common Emitter Characteristics (f = 1.0kHz) Common Emitter Characteristics 2.4 V CE = 10 V I C = 10 mA 2 h re h fe 1.6 hoe 1.2 0.8 0.4 0 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) Common Emitter Characteristics 1.
PAGE 6
(continued) Test Circuits 30 V 200 Ω 16 V Ω 1.0 KΩ 0 ≤ 200ns 500 Ω FIGURE 1: Saturated Turn-On Switching Timer 6.0 V - 1.5 V NOTE: BV EBO = 5.0 V 1k 30 V Ω 1.
PAGE 7
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