Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsBJTs & IGBTsTransistor

2N5210/MMBT5210

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose

amplifier applications at collector currents from 1µA to 50 mA.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 50 V

CBO

Collector-Base Voltage 50 V

EBO

Emitter-Base Voltage 4.5 V

Collector Current - Continuous 100 mA

, T

Operating and Storage Junction Temperature Range -55 to +150

2N5210, Rev B

Max.

Symbol

Characteristic

2N5210 MMBT5210

Units

Total Device Dissipation

Derate above 25

625

5.0

350

2.8

mW/

θJC

Thermal Resistance, Junction to Case 83.3

C/W

θJA

Thermal Resistance, Junction to Ambient 200 357

°C/W

 2002 Fairchild Semiconductor Corporation

2N5210/MMBT5210

SOT-23

Mark: 3M

TO-92

Summary of content (7 pages)

PAGE 1
2N5210/MMBT5210 2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. C BE E TO-92 B SOT-23 Mark: 3M Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 50 V Collector-Base Voltage 50 V Emitter-Base Voltage 4.
PAGE 2
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 50 ICBO Collector Cutoff Current VCB = 35 V, IE = 0 50 nA IEBO Emitter Cutoff Current VEB = 3.
PAGE 3
(continued) Typical Pulsed Current Gain vs Collector Current 1200 V C E = 5.0V o 125 C 1000 800 o 25 C 600 400 o - 40 C 200 0 0.01 0.03 0.3 0.1 3 1 30 10 100 VBEON - BASE-EMITTER ON VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.30 0.25 β = 10 0.20 o 125 C 0.15 o 25 C 0.10 0.05 o - 40 C 0.1 1 o - 40 C 0.8 o 25 C o 125 C 0.4 β = 10 0.2 0.
PAGE 4
(continued) Typical Characteristics (continued) Input and Output Capacitance vs Reverse Bias Voltage Contours of Constant Gain Bandwidth Product (f T ) V CE - COLLECTOR VOLTAGE (V) 5 CAPACITANCE (pF) f = 1.0 MHz 4 3 C te 2 C ob 1 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 175 MHz 7 5 150 MHz 3 2 125 MHz 100 MHz 75 MHz 1 0.1 20 Normalized Collector-Cutoff Current vs Ambient Temperature ° 1000 100 5 V CE = 5.
PAGE 5
(continued) Typical Characteristics (continued) Contours of Constant Narrow Band Noise Figure 10,000 R S - SOURCE RESISTANCE ( Ω ) R S - SOURCE RESISTANCE ( Ω ) Contours of Constant Narrow Band Noise Figure 3.0 dB 5,000 4.0 dB 2,000 6.0 dB 1,000 8.0 dB 500 V CE = 5.0 V 200 f = 100 Hz BANDWIDTH = 20 Hz 10 dB 12 dB 14 dB 100 1 10,000 5,000 2.0 dB 2,000 3.0 dB 1,000 4.0 dB 500 V CE = 5.0 V f = 1.0 kHz BANDWIDTH = 200 Hz 200 1 1,000 10000 1.0 dB 2.0 dB 3.0 dB 1000 4.
PAGE 6
(continued) Typical Common Emitter Characteristics h fe 1.3 h ie h oe 1.2 h re 1.1 h oe h re 1 h ie 0.9 0.8 I C = 1.0mA f = 1.0kHz T A = 25°C h fe 0 5 10 15 20 V CE - COLLECTOR VOLTAGE (V) 25 Typical Common Emitter Characteristics CHARACTE RI STICS RE LATIV E TO VA LUE (TA =25°C) 1.4 1.5 1.4 1.3 1.2 h ie VCE = 5.0V f = 1.0kHz I C = 1.0mA h re h fe h oe 1.1 1 0.9 0.8 h oe 0.7 h fe 0.6 h re 0.
PAGE 7
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.