Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETs2N7000_D26Z, MOSFET

November 1995

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

___________________________________________________________________________________________

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter

2N7000 2N7002 NDS7002A

Units

DSS

Drain-Source Voltage 60 V

DGR

Drain-Gate Voltage (R

< 1 MΩ)

60 V

GSS

Gate-Source Voltage - Continuous

±20

- Non Repetitive (tp < 50µs)

±40

Maximum Drain Current - Continuous 200 115 280 mA

- Pulsed 500 800 1500

Maximum Power Dissipation 400 200 300 mW

Derated above 25

C 3.2 1.6 2.4 mW/°C

STG

Operating and Storage Temperature Range -55 to 150 -65 to 150 °C

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300 °C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W

2N7000.SAM Rev. A1

These N-Channel enhancement mode field effect transistors

are produced using Fairchild's proprietary, high cell density,

DMOS technology. These products have been designed to

minimize on-state resistance while provide rugged, reliable,

and fast switching performance. They can be used in most

applications requiring up to 400mA DC and can deliver

pulsed currents up to 2A. These products are particularly

suited for low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and other

switching applications.

High density cell design for low R

DS(ON)

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

TO-92

2N7000

(TO-236AB)

2N7002/NDS7002A

Summary of content (7 pages)

PAGE 1
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
PAGE 2
Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Type Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA All IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 V TJ=125°C VDS = 60 V, VGS = 0 V TJ=125°C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse 2N7002 NDS7002A 1 µA 1 mA 1 µA 0.
PAGE 3
Electrical Characteristics T Symbol A = 25oC unless otherwise noted Parameter Conditions Type Min Typ Max Units ON CHARACTERISTICS Continued (Note 1) ID(ON) gFS On-State Drain Current Forward Transconductance VGS = 4.
PAGE 4
Typical Electrical Characteristics 2N7000 / 2N7002 / NDS7002A 2 3 V GS =4.0V 8.0 RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 9.0 7.0 1 .5 6.0 1 5.0 0 .5 4.0 I D , DRAIN-SOURCE CURRENT (A) VGS = 10V 3.0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 .0 6 .0 2 7 .0 8 .0 1 .5 9 .0 10 1 0 .5 5 0 0 .8 1 .2 I D , DRA IN CURRENT (A) 1 .6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2 3 V GS = 10V I D = 500m A R DS(on) , NORMALIZED 1.75 1.5 1.
PAGE 5
Typical Electrical Characteristics (continued) 2N7000 / 2N7002 /NDS7002A 2 I D = 250µA 1.05 1.025 1 0.975 0.95 0.925 -50 -25 V GS = 0V 1 1.075 IS , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 1.1 0 25 50 75 100 TJ , JUNCTION TEM PERATURE (°C) 125 0 .5 TJ = 1 2 5 ° C 0 .1 25°C 0 .0 5 -5 5 ° C 0 .0 1 0 .0 0 5 0 .0 0 1 0 .2 150 0 .6 0 .8 1 1 .2 , BODY DIODE FORW A RD VOLTAGE (V) 1 .4 Figure 8. Body Diode Forward Voltage Variation with Figure 7.
PAGE 6
3 2 3 2 1 1 0.5 S( RD Lim ) ON 10 it 1m 10 ms 10 0m s 1s 0.1 0.05 V GS = 10V s s 10 s DC SINGLE PULSE T A = 25°C 0.01 0u ID , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) Typical Electrical Characteristics (continued) 10 0.5 RD 1m 10 0.1 10 0.05 0.01 0m 0u s s ms s 1s 10 s DC VGS = 10V SINGLE PULSE T A = 25°C 0.005 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 1 Figure 13.
PAGE 7
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