Datasheet

2N7000.SAM Rev. A1
-50 -25 0 25 50 75 100 125 150
0.925
0.95
0.975
1
1.025
1.05
1.075
1.1
T , JUNCTION TEMPERATURE (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE
J
BV , NORMALIZED
DSS
I = 250µA
D
0.2 0.4 0.6 0.8 1 1.2 1.4
0.001
0.005
0.01
0.05
0.1
0.5
1
2
V , BODY DIODE FORWARD VOLTAGE (V)
I , REVERSE DRAIN CURRENT (A)
V = 0V
GS
T = 125°C
J
SD
S
25°C
-55°C
0 0.4 0.8 1.2 1.6 2
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V , GATE-SOURCE VOLTAGE (V)
g
GS
I =500mA
D
V = 25V
DS
115mA
280mA
1 2 3 5 10 20 30 50
1
2
5
10
20
40
60
V , DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
DS
C
iss
f = 1 MHz
V = 0V
GS
C
oss
C
rss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, V
in
Output, V
out
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage Variation
with Temperature
Figure 8. Body Diode Forward Voltage Variation with
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. Figure 12. Switching Waveforms
Typical Electrical Characteristics (continued)
2N7000 / 2N7002 /NDS7002A