Datasheet

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2N7002K — N-Channel Enhancement Mode Field Effect Transistor

2N7002K Rev. A3 1

January 2012

2N7002K

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Pb Free/RoHS Compliant

• ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size

Symbol Parameter Value Units

DSS

Drain-Source Voltage 60 V

DGR

Drain-Gate Voltage R

≤ 1.0MΩ 60 V

GSS

Gate-Source Voltage ±20 V

Drain Current Continuous

Pulsed

300

800

Operating Junction Temperature Range -55 to +150 °C

STG

Storage Temperature Range -55 to +150 °C

Symbol Parameter Value Units

Total Device Dissipation

Derating above T

= 25°C

350

2.8

mW/°C

θJA

Thermal Resistance, Junction to Ambient * 350 °C/W

SOT-23

Marking : 7K

Summary of content (6 pages)

PAGE 1
2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K Absolute Maximum Ratings * Symbol TA = 25°C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics (Note1) BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 10uA 60 V IDSS Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, @TC=125°C 1.0 500 μA IGSS Gate-Body Leakage VGS = ±20V, VDS = 0V ±10 μA 2.5 V 2 4 Ω On Characteristics (Note1) VGS(th) Gate Threshold Voltage RDS(ON) Satic Drain-Source On-Resistance VGS = 10V, ID = 0.5A VGS = 4.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 2.0 VGS = 10V 5V 1.5 4V 1.0 3V 0.5 2V 2 4 6 8 10 4V 2.5 4.5V 5V 2.0 6V 7V 1.5 10V 1.0 9V 8V 0.5 0.0 0.0 0 VGS = 3V 0.2 0.4 0.6 0.8 1.0 ID. DRAIN-SOURCE CURRENT(A) VDS. DRAIN-SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4.
PAGE 4
2N7002K — N-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics (Continue) Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature IS Reverse Drain Current, [mA] VGS = 0 V 100 o TA=150 C o 25 C 10 o -55 C 1 0.0 0.2 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] © 2011 Fairchild Semiconductor Corporation 2N7002K Rev. A3 www.fairchildsemi.
PAGE 5
2N7002K — N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions SOT-23 Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation 2N7002K Rev. A3 www.fairchildsemi.
PAGE 6
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