Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETs2N7002KW, MOSFET

2N7002KW — N-Channel Enhancement Mode Field Effect Transistor

2N7002KW Rev. A0 1

May 2011

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Pb Free/RoHS Compliant

• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size

Symbol Parameter Value Units

DSS

Drain-Source Voltage 60 V

GSS

Gate-Source Voltage ±20 V

Maximum Drain Current - Continuous

= 100°C

- Pulsed

310

195

1.2

Operating Junction Temperature Range -55 to +150 °C

STG

Storage Temperature Range -55 to +150 °C

Symbol Parameter Value Units

Total Device Dissipation

Derating above T

= 25°C

300

2.4

mW/°C

θJA

Thermal Resistance, Junction to Ambient * 410 °C/W

Marking : 7KW

SOT-323

Summary of content (6 pages)

PAGE 1
2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Ratings * Symbol TA = 25°C unless otherwise noted Parameter Value Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS = 0V, ID =10μA Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C IGSS Gate-Body Leakage 60 VGS = ±20V, VDS = 0V V 1.0 0.5 μA mA ±10 μA 2.1 V On Characteristics (Note1) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 1.
PAGE 3
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Temperature. 2.2 2.4 2.1 RDS(on) (Ω) Normalized Drain-Source On-Resistance ID. Drain-Source Current (A) VGS = 10V 9V 8V 6V 1.8 7V 1.5 5V 1.2 0.9 4V 0.6 0.3 VGS = 3V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.0 1.8 VGS = 10V 1.6 ID = 500mA 1.4 VGS = 5V 1.2 ID = 50mA 1.0 0.8 0.6 0.4 -50 4.5 0 VDS. Drain-Source Voltage (V) 100 150 o Figure 3.
PAGE 4
Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature. 10000 VGS = 0 V ID=250uA 1.075 IS. Reverse Drain Current [mA] BVdss , Normalized Drain Source Breakdown Voltage 1.100 1.050 1.025 1.000 0.975 0.950 0.925 -25 0 25 50 75 100 1000 100 o TA=125 C 10 o TA=25 C 1 o TA=-55 C 0.1 0.0 125 0.2 o 0.4 Figure 9. Capacitance Characteristics. 0.8 1.0 1.2 Figure 10. Gate Charge Characteristics. 100 10 VGS.
PAGE 5
2N7002KW — N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation 2N7002KW Rev. A0 www.fairchildsemi.
PAGE 6
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