Datasheet
2N7002V/VA — N-Channel Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002V/VA Rev. A1 1
April 2010
2N7002V/VA
N-Channel Enhancement Mode Field Effect Transistor
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant
Absolute Maximum Ratings * T
A
= 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimum land pad size.
Symbol Parameter Value Units
V
DSS
Drain-Source Voltage 60 V
V
DGR
Drain-Gate Voltage R
GS
≤ 1.0MΩ 60 V
V
GSS
Gate-Source Voltage Continuous
Pulsed
±20
±40
V
I
D
Drain Current Continuous
Pulsed
280
1.5
mA
A
T
J ,
T
STG
Junction and Storage Temperature Range -55 to +150 °C
Symbol Parameter Value Units
P
D
Total Device Dissipation
Derating above T
A
= 25°C
250
2.0
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient * 500 °C/W
SOT-563F
(Pin4)
Marking : AB Marking : AC
* Pin1 and Pin4 are exchangeable.