Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETs2N7002W, MOSFET

2N7002W — N-Channel Enhancement Mode Field Effect Transistor

2N7002W Rev. A1 1

February 2010

2N7002W

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

Symbol Parameter Value Units

DSS

Drain-Source Voltage 60 V

DGR

Drain-Gate Voltage R

 1.0M 60 V

GSS

Gate-Source Voltage Continuous

Pulsed

±20

±40

Drain Current Continuous

Continuous @ 100°C

Pulsed

115

800

J ,

STG

Junction and Storage Temperature Range -55 to +150 C

Symbol Parameter Value Units

Total Device Dissipation

Derating above T

= 25°C

200

1.6

mW/C

JA

Thermal Resistance, Junction to Ambient * 625 C/W

SOT-323

Marking : 2N

Summary of content (6 pages)

PAGE 1
2N7002W N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking : 2N Absolute Maximum Ratings * Symbol TA = 25°C unless otherwise noted Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS  1.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units 60 78 - V - 0.001 7 1.0 500 A VGS=±20V, VDS=0V - 0.2 ±10 nA 1.0 Off Characteristics (Note1) BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, ID=10uA Zero Gate Voltage Drain Current VDS=60V, VGS=0V VDS=60V, VGS=0V, @TC=125C IGSS Gate-Body Leakage On Characteristics (Note1) VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 1.76 2.0 V RDS(ON) Static Drain-Source On-Resistance - 1.6 2.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 3.0 RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE ID. DRAIN-SOURCE CURRENT(A) 1.6 VGS = 10V 1.4 1.2 5V 1.0 4V 0.8 0.6 0.4 3V 0.2 2V 0.0 0 1 2 3 4 5 6 7 8 9 VGS = 3V 2.0 10V 1.5 8V 7V 0.2 0.4 RDS(on), (Ω) DRANI-SOURCE ON-RESISTANCE RDS(on) (Ω) DRANI-SOURCE ON-RESISTANCE 0.8 1.0 3.0 VGS = 10V ID = 500 mA 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 2.5 ID = 500 mA 2.
PAGE 4
Figure 8. Power Derating 280 VGS = 0 V o 150 C PC[mW], POWER DISSIPATION IS Reverse Drain Current, [mA] Figure 7. Reverse Drain Current Variation with Diode Forward Voltage and Temperature 100 o 25 C 10 o -55 C 1 0.0 0.2 0.4 0.6 0.8 200 160 120 80 40 0 1.0 0 VSD, Body Diode Forward Voltage [V] 25 50 o 75 100 125 150 Ta[ C], AMBIENT TEMPERATURE © 2010 Fairchild Semiconductor Corporation 2N7002W Rev.
PAGE 5
SOT323 © 2010 Fairchild Semiconductor Corporation 2N7002W Rev. A1 2N7002W — N-Channel Enhancement Mode Field Effect Transistor Package Dimensions www.fairchildsemi.
PAGE 6
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.