Datasheet
©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
4NXXM, H11B1M, TIL113M
Rev. 1.0.3 3
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
EMITTER
V
F
Input Forward Voltage* I
F
= 10mA 4NXXM 1.2 1.5 V
H11B1M,
TIL113M
0.8 1.2 1.5
I
R
Reverse Leakage Current* V
R
= 3.0V 4NXXM 0.001 100 µA
V
R
= 6.0V H11B1M,
TIL113M
0.001 10
C Capacitance* V
F
= 0V, f = 1.0MHz All 150 pF
DETECTOR
BV
CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0mA, I
B
= 0 4NXXM,
TIL113M
30 60 V
H11B1M 25 60
BV
CBO
Collector-Base Breakdown Voltage* I
C
= 100µA, I
E
= 0 All 30 100 V
BV
ECO
Emitter-Collector Breakdown Voltage* I
E
= 100µA, I
B
= 0 4NXXM 5.0 10 V
H11B1M,
TIL113M
710
I
CEO
Collector-Emitter Dark Current* V
CE
= 10V, Base Open All 1 100 nA
Symbol Parameter Test Conditions Device Min. Typ. Max. Unit
DC CHARACTERISTICS
I
C(CTR)
Collector Output Current*
(1, 2)
I
F
= 10mA, V
CE
= 10V,
I
B
= 0
4N32M,
4N33M
50 (500) mA (%)
4N29M,
4N30M
10 (100)
I
F
= 1mA, V
CE
= 5V H11B1M 5 (500)
I
F
= 10mA, V
CE
= 1V TIL113M 30 (300)
V
CE(SAT)
Saturation Voltage*
(2)
I
F
= 8mA, I
C
= 2.0mA 4NXXM 1.0 V
TIL113M 1.25
I
F
= 1mA, I
C
= 1mA H11B1M 1.0
AC CHARACTERISTICS
t
on
Tur n-on Time I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V, R
L
= 100
Ω
4NXXM,
TIL113M
5.0 µs
I
F
= 10mA, V
CE
= 10V,
R
L
= 100
Ω
H11B1M 25
t
off
Tur n-off Time
I
F
= 200mA, I
C
= 50mA,
V
CC
= 10V, R
L
= 100
Ω
4N32M,
4N33M,
TIL113M
100 µs
4N29M,
4N30M
40
I
F
= 10mA, V
CE
= 10V,
R
L
= 100
Ω
H11B1M 18
BW
Bandwidth
(3, 4)
30 kHz