Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsOptoelectronics & DisplaysDIP-6

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — General Purpose 6-Pin Photodarlington Optocoupler

4NXXM, H11B1M, TIL113M

Rev. 1.0.3

September 2009

4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M

General Purpose 6-Pin Photodarlington Optocoupler

Features

■

High sensitivity to low input drive current

■

Meets or exceeds all JEDEC Registered

Speciﬁcations

■

UL, C-UL approved,

File #E90700, Volume 2

■

IEC 60747-5-2 approved (ordering option V)

Applications

■

Low power logic circuits

■

Telecommunications equipment

■

Portable electronics

■

Solid state relays

■

Interfacing coupling systems of different potentials

and impedances

Description

The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and

TIL113M have a gallium arsenide infrared emitter

optically coupled to a silicon planar photodarlington.

Schematic

EMITTER

COLLECTOR

ANODE

CATHODE

BASE

N/C

Summary of content (10 pages)

PAGE 1
4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Features Description ■ High sensitivity to low input drive current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
PAGE 2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
PAGE 3
Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit 1.2 1.5 V 1.2 1.5 EMITTER VF Input Forward Voltage* IF = 10mA 4NXXM H11B1M, TIL113M IR C Reverse Leakage Current* Capacitance* 0.8 VR = 3.0V 4NXXM 0.001 100 VR = 6.0V H11B1M, TIL113M 0.001 10 All 150 pF 60 V VF = 0V, f = 1.0MHz µA DETECTOR BVCEO Collector-Emitter Breakdown Voltage* IC = 1.
PAGE 4
Isolation Characteristics Symbol VISO RISO CISO Characteristic Input-Output Isolation Voltage Test Conditions (5) Isolation Resistance(5) Isolation Capacitance (5) Device Min. f = 60Hz, t = 1 sec. Typ. Max. Units All 7500 VACPEAK VDC 4N32M* 2500 V VDC 4N33M* 1500 VI-O = 500VDC All 1011 VI-O = Ø, f = 1MHz All Ω 0.8 pF * Indicates JEDEC registered data. Notes: 1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current. 2.
PAGE 5
Fig. 2 Normalized CTR vs. Forward Current 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF - FORWARD VOLTAGE (V) Fig. 1 LED Forward Voltage vs. Forward Current 1.8 1.5 1.4 TA = -55°C 1.3 TA = 25°C VCE = 5.0V TA = 25°C Normalized to IF = 10 mA 1.0 0.8 0.6 1.2 0.4 TA = 100°C 1.1 0.2 1.0 0.0 1 10 0 100 2 4 6 IF - LED FORWARD CURRENT (mA) Fig. 3 Normalized CTR vs. Ambient Temperature 10 12 14 16 18 20 Fig. 4 CTR vs. RBE (Unsaturated) 1.4 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.
PAGE 6
Fig. 7 Switching Speed vs. Load Resistor Fig. 8 Normalized ton vs. RBE 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED - (µs) IF = 10 mA VCC = 10 V TA = 25°C 100 Toff 10 Tf Ton 1 Tr 0.1 0.1 4.5 VCC = 10 V IC = 2 mA RL = 100 Ω 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 1 10 100 10 100 10000 100000 Fig. 10 Dark Current vs. Ambient Temperature Fig. 9 Normalized toff vs. RBE ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1.4 1.
PAGE 7
Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.
PAGE 8
Suffix Example Option No Suffix 4N32M S 4N32SM SR2 4N32SR2M T 4N32TM 0.4" Lead Spacing V 4N32VM VDE 0884 TV 4N32TVM VDE 0884, 0.
PAGE 9
12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Note: All dimensions are in millimeters. Reflow Soldering Profile 300 280 260 240 220 200 180 160 °C 140 120 100 80 60 40 20 0 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 1.822°C/Sec Ramp up rate 33 Sec 0 60 120 180 270 360 Time (s) ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.
PAGE 10
Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™* ™* ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ FRFET® SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® ® OPTOPLANAR ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Dro