Datasheet

©1993 Fairchild Semiconductor Corporation www.fairchildsemi.com
74LVX00 Rev. 1.4.0 3
74LVX00 — Low Voltage Quad 2-Input NAND Gate
DC Electrical Characteristics
Noise Characteristics
(2)
Note:
2. Input t
r
= t
f
= 3ns
Symbol Parameter V
CC
Conditions
T
A
= +25°C
T
A
= –40°C to
+85°C
UnitsMin. Typ. Max. Min. Max.
V
IH
HIGH Level Input
Voltage
2.0 1.5 1.5 V
3.0 2.0 2.0
3.6 2.4 2.4
V
IL
LOW Level Input
Voltage
2.0 0.5 0.5 V
3.0 0.8 0.8
3.6 0.8 0.8
V
OH
HIGH Level Output
Voltage
2.0 V
IN
= V
IL
or V
IH
,
I
OH
= –50µA
1.9 2.0 1.9 V
3.0 V
IN
= V
IL
or V
IH
,
I
OH
= –50µA
2.9 3.0 2.9
V
IN
= V
IL
or V
IH
,
I
OH
= –4mA
2.58 2.48
V
OL
LOW Level Output
Voltage
2.0 V
IN
= V
IL
or V
IH
,
I
OL
= 50µA
0.0 0.1 0.1 V
3.0 V
IN
= V
IL
or V
IH
,
I
OL
= 50µA
0.0 0.1 0.1
V
IN
= V
IL
or V
IH
,
I
OL
= 4mA
0.36 0.44
I
IN
Input Leakage
Current
3.6
V
IN
= 5.5V or GND
±0.1 ±1.0 µA
I
CC
Quiescent Supply
Current
3.6 V
IN
= V
CC
or GND 2.0 20.0 µA
Symbol Parameter V
CC
(V) C
L
(pF)
T
A
= 25°C
UnitsTyp. Limit
V
OLP
Quiet Output Maximum Dynamic V
OL
3.3 50 0.3 0.5 V
V
OLV
Quiet Output Minimum Dynamic V
OL
3.3 50 –0.3 –0.5 V
V
IHD
Minimum HIGH Level Dynamic Input Voltage 3.3 50 2.0 V
V
ILD
Maximum LOW Level Dynamic Input Voltage 3.3 50 0.8 V