Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
BC337/338
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
h
FE
Classification
Symbol Parameter Value Units
V
CES
Collector-Emitter Voltage
: BC337
: BC338
50
30
V
V
V
CEO
Collector-Emitter Voltage
: BC337
: BC338
45
25
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 800 mA
P
C
Collector Power Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage
: BC337
: BC338
I
C
=10mA, I
B
=0
45
25
V
V
BV
CES
Collector-Emitter Breakdown Voltage
: BC337
: BC338
I
C
=0.1mA, V
BE
=0
50
30
V
V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=0.1mA, I
C
=0 5 V
I
CES
Collector Cut-off Current
: BC337
: BC338
V
CE
=45V, I
B
=0
V
CE
=25V, I
B
=0
2
2
100
100
nA
nA
h
FE1
h
FE2
DC Current Gain V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
100
60
630
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=500mA, I
B
=50mA 0.7 V
V
BE
(on) Base Emitter On Voltage V
CE
=1V, I
C
=300mA 1.2 V
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA, f=50MHz 100 MHz
C
ob
Output Capacitance V
CB
=10V, I
E
=0, f=1MHz 12 pF
Classification 16 25 40
h
FE1
100 ~ 250 160 ~ 400 250 ~ 630
h
FE2
60- 100- 170-
BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC327/BC328
1. Collector 2. Base 3. Emitter
TO-92
1