Datasheet

BC638 — PNP Epitaxial Silicon Transistor
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC638 Rev. C3 1
March 2009
BC638
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC637
Absolute Maximum Ratings T
a
= 25°C unless otherwise noted
Electrical Characteristics T
a
= 25°C unless otherwise noted
Symbol Parameter Value Units
V
CER
Collector-Emitter Voltage at R
BE
=1KΩ -60 V
V
CES
Collector-Emitter Voltage -60 V
V
CEO
Collector-Emitter Voltage -60 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -1 A
I
CP
Peak Collector Current -1.5 A
I
B
Base Current -100 mA
P
C
Collector Power Dissipation 1 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -10mA, I
B
=0 -60 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
=0 -0.1 μA
I
EBO
Emitter Cut-off Current V
EB
= -5V, I
C
=0 -10 μA
h
FE1
h
FE2
h
FE3
DC Current Gain V
CE
= -2V, I
C
= -5mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
25
40
25
160
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -500mA, I
B
= -50mA -0.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -2V, I
C
= -500mA -1 V
f
T
Current Gain Bandwidth Product V
CE
= -5V, I
C
= -10mA,
f=50MHz
100 MHz
1. Emitter 2. Collector 3. Base
TO-92
1