Datasheet

BC847BS Rev. A

BC847BS

June 2007

BC847BS

NPN Multi-chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector currents to 200 mA.

Sourced from Process 07.

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics * T

= 25°C unless otherwise noted

*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.

Symbol Parameter Value Units

CBO

Collector-Base Voltage 50 V

CES

Collector-Base Voltage 50 V

CEO

Collector-Emitter Voltage 45 V

EBO

Emitter-Base Voltage 6.0 V

Collector Current (DC) 100 mA

STG

Junction Temperature and Storage Temperature -55 ~ +150 °C

Symbol Characteristic Max Units

Total Device Dissipation

Derate above 25℃

210

1.6

mW/℃

R θ JA Thermal Resistance, Junction to Ambient 625 ℃/W

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can

be of either orientation and will not affect the

functionality of the device.

Pin #1

SC70-6

Mark: .1F

Dual NPN Signal Transister

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BC847BS NPN Multi-chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. E2 B2 Dual NPN Signal Transister C1 NOTE: The pinouts are symmetrical; pin 1 and pin SC70-6 Mark: .1F Absolute Maximum Ratings Symbol C2 B1 Pin #1 E1 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
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Symbol * Ta = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 μA, IE = 0 50 V V(BR)CES Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V V(BR)CEO Collector-Base Breakdown Voltage IC = 10 mA, IB = 0 45 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150°C 15 5.
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