Datasheet

BC857S — PNP, Multi-Chip, General-Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC857S Rev. 1.1.0 2
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150 °C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Note:
3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Value Unit
V
CEO
Collector-Emitter Voltage -45 V
V
CES
Collector-Base Voltage -50 V
V
CBO
Collector-Base Voltage -50 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current - Continuous -200 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max. Unit
P
D
Total Device Dissipation 300 mW
Derate Above 25°C2.4mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 415 °C/W