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1997 Fairchild Semiconductor Corporation

PNP Darlington Transistor

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics TA = 25°C unless otherwise noted

BCV26

This device is designed for applications requiring extremely high

current gain at currents to 800 mA. Sourced from Process 61.

Symbol Parameter Value Units

CEO

Collector-Emitter Voltage 30 V

CBO

Collector-Base Voltage 40 V

EBO

Emitter-Base Voltage 10 V

Collector Current - Continuous 1.2 A

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

Symbol Characteristic Max Units

*BCV26

Total Device Dissipation

Derate above 25

350

2.8

mW/

Thermal Resistance, Junction to Ambient 357

C/W

SOT-23

Mark: FD

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

BCV26

Summary of content (7 pages)

PAGE 1
BCV26 BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous TJ, Tstg Operating and Storage Junction Temperature Range 1.
PAGE 2
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 0.1 µA IEBO Emitter-Cutoff Current VEB = 10 V, IC = 0 0.1 µA 1.0 V 1.
PAGE 3
(continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 2 β = 1000 - 40 °C 1.6 1.2 25 °C 125 °C 0.8 0.4 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 V BE( ON)- BASE EMITTER ON VOLTAGE (V) VBESAT - BASE EMITTE R VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 2 1.2 25 °C 125 °C 0.8 V CE = 5V 0.4 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 Input and Output Capacitance vs Reverse Bias Voltage 16 100 f = 1.
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SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel.
PAGE 5
SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D1 D0 T E1 W F E2 Wc B0 Tc A0 P1 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 SOT-23 (8mm) 3.15 +/-0.10 2.77 +/-0.10 W 8.0 +/-0.3 D0 D1 E1 E2 1.55 +/-0.05 1.125 +/-0.125 1.75 +/-0.10 F 6.25 min 3.50 +/-0.05 P1 P0 4.0 +/-0.1 4.0 +/-0.1 K0 T 1.30 +/-0.10 0.228 +/-0.
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SOT-23 Package Dimensions SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 ©2000 Fairchild Semiconductor International September 1998, Rev.
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