Datasheet

©2004 Fairchild Semiconductor Corporation Rev. A, April 2004
BCV72
Absolute Maximum Ratings * T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a
=25°C unless otherwise noted
Thermal Characteristics T
a
=25°C unless otherwise noted
Device mounted on FR-4PCB 40mm × 40mm × 1.5mm
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 60 V
V
CBO
Collector-Base Voltage 80 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector current (DC) 500 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
E
= 0 80 V
V
(BR)CEO
Collector-Emitter Breakdown Voltage I
C
= 2mA, I
B
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5.0 V
I
CBO
Collector Cutoff Current V
CB
= 20V, I
E
= 0
V
CB
= 20V, I
E
= 0, T
a
= 100°C
100
10
nA
µA
On Characteristics
h
FE
DC Current Gain I
C
= 2.0mA, V
CE
= 5.0V 200 450
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 10mA, I
B
= 0.5mA 0.25 V
V
BE(on)
Base-Emitter On Voltage I
C
= 2.0mA, V
CE
= 5.0V 0.55 0.7 V
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
BCV72
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
currents to 300mA.
• Sourced from process 10.
1. Base 2. Emitter 3. Collector
1
2
3
SOT-23
Mark: K8