Datasheet

©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002
BCX70H
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
• Refer to KST3904 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 45 V
V
CEO
Collector-Emitter Voltage 45 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 200 mA
P
C
Collector Power Dissipation 350 mW
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=2.0mA, I
B
=0 45 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=1.0µA, I
C
=0 5 V
I
CES
Collector Cut-off Current V
CE
=32V, V
BE
=0 20 nA
I
EBO
Emitter Cut-off Current V
EB
=4V, I
C
=0 20 nA
h
FE
DC Current Gain V
CE
=5V, I
C
=10µA
V
CE
=5V, I
C
=2.0mA
V
CE
=1V, I
C
=50mA
20
180
70
310
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
0.35
0.55
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
0.6
0.7
0.85
1.05
V
V
V
BE
(on) Base-Emitter On Voltage V
CE
=5V, I
C
=2.0mA 0.55 0.75 V
f
T
Current Gain Bandwidth Product V
CE
=5V, I
C
=10mA, f=100MHz 125 MHz
C
ob
Output Capacitance V
CE
=10V, I
E
=0, f=1MHz 4.5 pF
NF Noise Figure V
CE
=5V, I
C
=0.2mA
R
S
=2KΩ, f=1KHz
6dB
t
ON
Turn On Time I
C
=10mA, I
B1
=1.0mA 150 ns
t
OFF
Turn Off Time V
BB
=3.6V, I
B2
=1.0mA
R
1
=R
2
=5KΩ, R
L
=990Ω
800 ns
BCX70H
General Purpose Transistor
AH
Marking
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3