Datasheet

©2002 Fairchild Semiconductor Corporation Rev. B, September 2002
BD676A/678A/680A/682
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : BD676A
: BD678A
: BD680A
: BD682
- 45
- 60
- 80
- 100
V
V
V
V
V
CEO
Collector-Emitter Voltage : BD676A
: BD678A
: BD680A
: BD682
- 45
- 60
- 80
- 100
V
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 4 A
I
CP
*Collector Current (Pulse) - 6 A
I
B
Base Current - 100 mA
P
C
Collector Dissipation (T
C
=25°C) 14 W
R
θja
Thermal Resistance (Junction to Ambient) 88 °C/W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage
: BD676A
: BD678A
: BD680A
: BD682
I
C
= - 50mA, I
B
= 0 - 45
- 60
- 80
- 100
I
CBO
Collector-Base Voltage : BD676A
: BD678A
: BD680A
: BD682
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, V
BE
= 0
- 200
- 200
- 200
- 200
µA
µA
µA
µA
I
CEO
Collector Cut-off Current : BD676A
: BD678A
: BD680A
: BD682
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
- 500
- 500
- 500
- 500
µA
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 2 mA
h
FE
* DC Current Gain : BD676A/678A/680A
: BD682
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 1.5A
750
750
V
CE
(sat) * Collector-Emitter Saturation Voltage
: BD676A/678A/680A
: BD682
I
C
= - 2A, I
B
= - 40mA
I
C
= - 1.5A, I
B
= - 30mA
- 2.8
- 2.5
V
V
V
BE
(on) * Base-Emitter On Voltage : BD676A/678A/680A
: BD682
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 1.5A
- 2.5
- 2.5
V
V
BD676A/678A/680A/682
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD675A, BD677A, BD679A and BD681 respectively
1
TO-126
1. Emitter 2.Collector 3.Base