Datasheet

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
BS170 / MMBF170 Rev. E2 1
March 2010
BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter BS170 MMBF170 Units
V
DSS
Drain-Source Voltage 60 V
V
DGR
Drain-Gate Voltage (R
GS
≤ 1MΩ)60V
V
GSS
Gate-Source Voltage ± 20 V
I
D
Drain Current - Continuous 500 500
mA
- Pulsed 1200 800
T
J
, T
STG
Operating and Storage Temperature Range - 55 to 150 °C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300 °C
Symbol Parameter BS170 MMBF170 Units
P
D
Maximum Power Dissipation
Derate above 25°C
830
6.6
300
2.4
mW
mW/°C
R
θJA
Thermal Resistance, Junction to Ambient 150 417 °C/W
G
S
D
D
G
S
TO-92
SOT-23
BS170 MMBF170
Features
■ High density cell design for low R
DS(ON)
.
■ Voltage controlled small signal switch.
■ Rugged and reliable.
■ High saturation current capability.