Datasheet

1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DS
60 Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current
(1)
I
D
0.5 Adc
Total Device Dissipation @ T
A
= 25°C P
D
350 mW
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0)
I
GSS
— 0.01 10 nAdc
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 100 µAdc)
V
(BR)DSS
60 90 — Vdc
ON CHARACTERISTICS
(2)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(Th)
0.8 2.0 3.0 Vdc
Static Drain–Source On Resistance
(V
GS
= 10 Vdc, I
D
= 200 mAdc)
r
DS(on)
— 1.8 5.0 Ω
Drain Cutoff Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
I
D(off)
— — 0.5 µA
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 250 mAdc)
g
fs
— 200 — mmhos
SMALL–SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 10 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
— — 60 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(I
D
= 0.2 Adc) See Figure 1
t
on
— 4.0 10 ns
Turn–Off Time
(I
D
= 0.2 Adc) See Figure 1
t
off
— 4.0 10 ns
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Order this document
by BS170/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
1
2
3
 Motorola, Inc. 1997
1 DRAIN
3 SOURCE
2
GATE

REV 1