Datasheet

2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
, DRAIN CURRENT (AMPS)
D(on)
I
, DRAIN CURRENT (AMPS)
D(on)
I
Figure 1. Switching Test Circuit
20 dB
50
Ω ATTENUATOR
PULSE GENERATOR
+25 V
V
in
40 pF
1.0 M Ω
50 Ω
125 Ω
50 Ω
V
out
TO SAMPLING SCOPE
50
Ω INPUT
OUTPUT
INVERTED
INPUT
PULSE
WIDTH
10%
50%
10%
90%
90%
t
off
t
on
Figure 2. Switching Waveforms
RESISTIVE SWITCHING
(V
in
Amplititude 10 Volts)
V
in
V
out
2.0
1.6
1.2
0.8
0.4
0
, THRESHOLD VOLTAGE
50
150
050
100
T
J
, JUNCTION TEMPERATURE (
° C)
V
GS(th)
V
DS
, DRAIN –TO–SOURCE VOLTAGE (VOLTS)
0.8
0.4
1.2
2.0
1.6
1.0 2.0 3.0 4.00
V
DS
, DRAIN –TO–SOURCE VOLTAGE (VOLTS)
0.8
0.4
1.2
1.6
2.0
010
20
30
V
DS
, DRAIN –TO–SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
01020304050
60
40
20
80
100
40 60
Figure 3. V
GS(th)
Normalized versus Temperature Figure 4. On–Region Characteristics
Figure 5. Output Characteristics Figure 6. Capacitance versus
Drain–To–Source Voltage
V
GS
= 10 V
V
GS
= 0 V
C
iss
C
oss
C
rss
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V
V
DS
= V
GS
I
D
= 1.0 mA
V
GS
= 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.0 V