Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsBS270, MOSFET

April 1995

BS270

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

________________________________________________________________________________

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter BS270 Units

DSS

Drain-Source Voltage 60 V

DGR

Drain-Gate Voltage (R

< 1MΩ)

60 V

GSS

Gate-Source Voltage - Continuous

±20

- Non Repetitive (tp < 50µs)

±40

Drain Current - Continuous 400 mA

- Pulsed 2000

Maximum Power Dissipation 625 mW

Derate Above 25°C 5 mW/°C

STG

Operating and Storage Temperature Range -55 to 150 °C

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

300 °C

THERMAL CHARACTERISTICS

Thermal Resistacne, Junction-to-Ambient 200 °C/W

BS270.SAM

400mA, 60V. R

DS(ON)

= 2Ω @ V

= 10V.

High density cell design for low R

DS(ON)

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

These N-Channel enhancement mode field effect transistors

are produced using Fairchild's proprietary, high cell density,

DMOS technology. These products have been designed to

minimize on-state resistance while provide rugged, reliable,

and fast switching performance. They can be used in most

applications requiring up to 500mA DC. These products are

particularly suited for low voltage, low current applications such

as small servo motor control, power MOSFET gate drivers,

and other switching applications.

Summary of content (10 pages)

PAGE 1
April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC.
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Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V 60 V TJ = 125oC 1 µA 500 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA IGSSF Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -10 nA 2.5 V 1.2 2 Ω 2 3.5 VGS = 4.5 V, ID = 75 mA 1.
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Typical Electrical Characteristics 2 3 9.0 V GS =4.0V 8.0 , DRAIN-SOURCE CURRENT (A) 7.0 RDS(on) , NORMALIZED 1.5 6.0 1 5.0 0.5 I D 4.0 DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5.0 6 .0 2 7.0 8.0 1.5 9.0 10 1 0.5 5 0 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 3 1.75 V GS = 10V R DS(on) , NORMALIZED ID = 500mA 1.5 1.25 1 0.75 0.
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Typical Electrical Characteristics (continued) 2 ID = 10µA 1.05 1.025 1 0.975 0.95 0.925 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 0.5 TJ = 125°C 0.1 25°C 0.05 -55°C 0.01 0.005 0.001 0.2 150 0.4 0.6 V SD 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Figure 7. Breakdown Voltage Variation with Temperature.
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Typical Electrical Characteristics (continued) 3 2 I D , DRAIN CURRENT (A) 1 RD S( ON im )L 10 it 1m 0.5 0u s s 10 ms 10 0m s 1s 0.1 10 s DC 0.05 V GS = 10V SINGLE PULSE T A = 25°C 0.01 0.005 1 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 13. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.1 R θJA (t) = r(t) * R θJA 0.2 0.2 R θJA = (See Datasheet) 0.1 P(pk) 0.05 0.05 t1 0.02 0.02 0.01 0.
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TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.
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TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER (ON PKG.
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TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.
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TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 * * ; Note: All package 97 or 98 transistors are leadformed to this configuration prior to bulk shipment. Order L34Z option if in-line leads are preferred on package 97 or 98. * Standard Option on 97 & 98 package code January 2000, Rev.
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