Datasheet

©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
BSR56
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol Parameter Value Units
V
DGO
Drain-Gate Voltage 40 V
V
GSO
Gate-Source Voltage - 40 V
I
GF
Forward Gate Current 50 mA
P
tot
Total Power Dissipation up to T
amb
=40°C 250 mW
T
STG
Storage Temperature Range - 55 ~ 150 °C
T
J
Junction Temperature 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
GSS
Gate-Source Voltage V
DS
= 0V, I
C
= 1µA40 V
I
GSS
Gate Reverse Current V
GS
= 20V 1 nA
I
DSS
Zero-Gate Voltage Drain Current V
DS
= 15V, V
GS
= 0V 50 mA
V
GS
(off) Gate-Source Cut-off Voltage V
DS
= 15V, I
D
= 0.5nA 4 10 V
V
DS
(on) Drain-Source On Voltage V
GS
= 0V, I
D
= 20mA 750 mV
r
ds
(on) Drain-Source On Reverse V
GS
= 0V, I
D
= 0 25 Ω
C
rss
Reverse Transfer Capacitance V
DS
= 10V, V
GS
= 0V 5 pF
t
d
Delay Time V
DD
= 10V, V
GS
(on) = 0V
I
D
= 20mA, V
GS
(off) = 10V
6nS
t
r
Rise Time 3nS
t
off
Turn-off Time 25 nS
BSR56
N-Channel Low-Frequency Low-Noise
Amplifier
• This device is designed for low-power chopper or switching application
sourced from process 51
1. Drain 2. Source 3. Gate
SOT-23
1
2
3
Mark: M4