Datasheet

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BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor

BSS138W Rev. A0 1

December 2010

BSS138W

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Value Units

DSS

Drain-Source Voltage 50 V

GSS

Gate-Source Voltage ±20 V

Drain Current - Continuous (Note1)

- Pulsed

0.21

0.84

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

300 °C

Symbol Parameter Value Units

Maximum Power Dissipation (Note1)

Derate Above 25°C

340

2.72

mW/°C

θJA

Thermal Resistance, Junction to Ambient (Note1) 367 °C/W

Device Marking Device Reel Size Tape width Quantity

138 BSS138W 7’’ 8mm 3000 units

SOT-323

Marking : 138

Features

•R

DS(ON)

= 3.5Ω @ V

= 10V, I

= 0.22A

DS(ON)

= 6.0Ω @ V

= 4.5V, I

= 0.22A

• High density cell design for extremely low R

DS(ON)

• Rugged and Reliable

• Compact industry standard SOT-323 surface mount

package

General Description

These N-Channel enhancement mode field effect

transistor. These products have been designed to

minimize on-state resistance while provide rugged,

reliable, and fast switching performance.These prod-

ucts are particularly suited for low voltage, low current

applications such as small servo motor control, power

MOSFET gate drivers, and other switching applica-

tions.

Summary of content (6 pages)

PAGE 1
BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. • RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 50 Breakdown Voltage Temperature ID = 250μA, Referenced to 25°C Coefficient V 71 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 50V, VGS = 0V VDS = 50V, VGS = 0V, TJ = 125°C VDS = 30V, VGS = 0V 0.5 5 100 μA μA nA IGSS Gate-Body Leakage VGS = ±20V, VDS = 0V ±100 nA 1.
PAGE 3
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 3.5 RDS(on), (Ω) Drain-Source On-Resistance ID. Drain-Source Current (A) 2.0 VGS = 10V 1.5 6V 4.5V 3.5V 1.0 3V 0.5 2.5V 3.0 2.5 4.5V 4V 3V VGS = 2.5V 2.0 3.5V 1.5 1.0 10V 6V 2V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.5 0.0 3.0 0.2 0.4 Figure 3. On-Resistance Variation with Temperature. 1.0 4.0 ID = 110 mA VGS = 10V 3.
PAGE 4
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 10 100 CISS, COSS, CRSS. Capacitance (pF) VGS. Gate-Source Voltage (V) ID = 220mA 8 VDS = 8V 6 VDS = 25V VDS = 30V 4 2 0 0.0 f = 1MHZ VGS = 0V 80 60 CISS 40 COSS 20 CRSS 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 Qg. Gate Charge (nC) 40 50 Figure 10. Single Pulse Maximum Power Dissipation. 1 10 P(pk), Peak Transient Power (W) 5 0 10 ID, Drain Current [A] 30 VDS. Voltage Bias (V) Figure 9.
PAGE 5
BSS138W — N-Channel Logic Level Enhancement Mode Field Effect Transistor Physical Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 www.fairchildsemi.
PAGE 6
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