Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsBUZ11, MOSFET N channel 50V

BUZ11

30A, 50V, 0.040 Ohm, N-Channel Power

MOSFET

This is an N-Channel enhancement mode silicon gate power

ﬁeld effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Formerly developmental type TA9771.

Features

• 30A, 50V

•r

DS(ON)

= 0.040

Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ11 TO-220AB BUZ11

NOTE: When ordering, use the entire part number.

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

June 1999 File Number 2253.2

[ /Title

(BUZ1

/Sub-

ject

(30A,

50V,

0.040

Ohm,

N-

Chan-

nel

Power

MOS-

FET)

/Autho

r ()

/Key-

words

(Inter-

sil

Corpo-

ration,

N-

Chan-

nel

Power

MOS-

FET,

TO-

220AB

)

/Cre-

ator ()

/DOCI

NFO

pdf-

mark

Data Sheet

Fairchild hat im Jan. 2001 das DISCRETE POWER BUSINESS (power MOSFET) von Intersil übernommen (vormals Harris).

Summary of content (6 pages)

PAGE 1
Fairchild hat im Jan. 2001 das DISCRETE POWER BUSINESS (power MOSFET) von Intersil übernommen (vormals Harris). BUZ11 Data Sheet [ /Title (BUZ1 1) /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.
PAGE 2
BUZ11 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 30oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID BUZ11 50 50 30 UNITS V V A Pulsed Drain Current (Note 3) . . . .
PAGE 3
BUZ11 Typical Performance Curves Unless Otherwise Specified 40 POWER DISSIPATION MULTIPLIER 1.2 VGS > 10V ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 30 20 10 0.2 0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 ZθJC, TRANSIENT THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 1 0 150 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 0.5 0.2 0.1 0.1 PDM 0.05 0.02 0.
PAGE 4
BUZ11 20 Unless Otherwise Specified (Continued) 0.15 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS = 25V 15 10 5 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7 0.06 0.04 0.02 50 100 0 150 VDS = VGS ID = 1mA 3 2 1 0 -50 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) 10 CISS COSS CRSS 10-1 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10.
PAGE 5
BUZ11 Typical Performance Curves 15 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TJ = 25oC 102 TJ = 150oC 101 100 10-1 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) ID = 45A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 103 Unless Otherwise Specified (Continued) VDS = 10V 10 VDS = 40V 5 0 3.0 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 FIGURE 13.
PAGE 6
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