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CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers

CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1

November 2009

CNY171M, CNY172M, CNY173M, CNY174M,

CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,

MOC8106M, MOC8107M

Phototransistor Optocouplers

Features

■

UL recognized (File # E90700, Vol. 2)

■

VDE recognized

– Add option V (e.g., CNY17F2VM)

– File #102497

■

Current transfer ratio in select groups

■

High BV

CEO

: 70V minimum (CNY17XM, CNY17FXM,

MOC810XM)

■

Closely matched current transfer ratio (CTR)

minimizes unit-to-unit variation.

■

Very low coupled capacitance along with no chip to

pin 6 base connection for minimum noise

susceptability (CNY17FXM, MOC810XM)

Applications

■

Power supply regulators

■

Digital logic inputs

■

Microprocessor inputs

■

Appliance sensor systems

■

Industrial controls

Description

The CNY17XM, CNY17FXM and MOC810XM devices

consist of a Gallium Arsenide IRED coupled with an NPN

phototransistor in a dual in-line package.

Schematics

CNY17F1M/2M/3M/4M

MOC8106M/7M

CNY171M/2M/3M/4M

5 COLLECTOR COLLECTOR

4 EMITTERNC NC

ANODE

CATHODE

4 EMITTER

BASE

ANODE

CATHODE

Package Outlines

Summary of content (11 pages)

PAGE 1
CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features Description ■ UL recognized (File # E90700, Vol. 2) The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. ■ VDE recognized ■ ■ ■ ■ – Add option V (e.g.
PAGE 2
Symbol Parameters Value Units TOTAL DEVICE TSTG Storage Temperature -40 to +150 °C TOPR Operating Temperature -40 to +100 °C TJ TSOL PD Junction Temperature Lead Solder Temperature Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C -40 to +125 ºC 260 for 10 sec °C 250 mW 2.94 mW/°C EMITTER IF Continuous Forward Current 60 mA VR Reverse Voltage 6 V 1.
PAGE 3
Individual Component Characteristics Symbol Parameters Test Conditions Device Min. Typ. Max. Units IF = 60mA CNY17XM, CNY17FXM 1.0 1.35 1.65 V IF = 10mA MOC810XM 1.0 1.15 1.50 EMITTER VF Input Forward Voltage CJ Capacitance VF = 0 V, f = 1.0MHz All 18 IR Reverse Leakage Current VR = 6V All 0.001 pF 10 µA DETECTOR BVCEO Breakdown Voltage Collector to Emitter IC = 1.
PAGE 4
(Continued) (TA = 25°C Unless otherwise specified.)(1) Transfer Characteristics (Continued)(3) AC Characteristics(4) Symbol Test Conditions Min. Typ.* Max. Units NON-SATURATED SWITCHING TIME ton Turn-On Time All Devices IC = 2.0mA, VCC = 10V, RL = 100Ω 2 10 µs toff Turn-Off Time All Devices IC = 2.0mA, VCC = 10V, RL = 100Ω 3 10 µs td Delay Time CNY17XM/XFM IF = 10mA, VCC = 5V, RL = 75Ω 5.6 µs tr Rise Time All Devices IC = 2.
PAGE 5
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Main Voltage < 150Vrms I-IV For Rated Main voltage < 300Vrms I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.
PAGE 6
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Typical Performance Characteristics Fig. 2 Normalized CTR vs. Ambient Temperature Fig. 1 Normalized CTR vs. Forward Current 1.4 1.6 VCE = 5.0V TA = 25˚C 1.4 Normalized to IF = 10mA 1.2 IF = 5mA 1.2 NORMALIZED CTR 1.0 NORMALIZED CTR 1.0 0.8 0.6 IF = 10mA 0.8 IF = 20mA 0.6 0.4 0.4 0.2 Normalized to: IF = 10mA TA = 25˚C 0.0 0 2 4 6 8 10 12 14 16 18 0.
PAGE 7
Fig. 8 LED Forward Voltage vs. Forward Current 1.8 Fig. 7 Normalized toff vs. RBE 1.7 1.3 1.2 VF – FORWARD VOLTAGE (V) NORMALIZED toff – (toff(RBE) / toff(open)) 1.4 1.1 1.0 0.9 0.8 0.7 0.6 0.5 VCC = 10V IC = 2mA RL = 100Ω 0.4 0.3 1.6 1.5 1.4 TA = -55°C 1.3 TA = 25°C 1.2 TA = 100°C 0.2 1.1 0.1 10 100 1000 10000 100000 1.0 RBE – BASE RESISTANCE (k Ω) 1 10 100 IF – LED FORWARD CURRENT (mA) VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) Fig.
PAGE 8
Through Hole 0.4" Lead Spacing 8.13–8.89 6 4 8.13–8.89 6 4 1 3 6.10–6.60 6.10–6.60 Pin 1 1 3 Pin 1 5.08 (Max.) 0.25–0.36 7.62 (Typ.) 3.28–3.53 5.08 (Max.) 0.25–0.36 3.28–3.53 0.38 (Min.) 2.54–3.81 0.38 (Min.) 2.54–3.81 0.20–0.30 2.54 (Bsc) (0.86) 15° (Typ.) 2.54 (Bsc) (0.86) 0.41–0.51 1.02–1.78 0.20–0.30 0.41–0.51 0.76–1.14 10.16–10.80 1.02–1.78 0.76–1.14 Surface Mount (1.78) 8.13–8.89 6 4 (1.52) (2.54) (7.49) 6.10–6.60 8.43–9.90 (10.54) 1 3 (0.
PAGE 9
Option Order Entry Identifier (Example) No option CNY171M S CNY171SM SR2 CNY171SR2M T CNY171TM 0.4" Lead Spacing V CNY171VM IEC60747-5-2 TV CNY171TVM IEC60747-5-2, 0.
PAGE 10
12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 260°C 280 260 >245°C = 42 Sec 240 220 200 180 °C Time above 183°C = 90 Sec 160 140 120 1.822°C/Sec Ramp up rate 100 80 60 40 33 Sec 20 0 0 60 120 180 270 360 Time (s) ©2006 Fairchild Semiconductor Corporation CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 www.fairchildsemi.
PAGE 11
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