Datasheet

©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 3
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
(1)
Individual Component Characteristics
Isolation Characteristics
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
(3)
*All typicals at T
A
= 25°C
Symbol Parameters Test Conditions Device Min. Typ. Max. Units
EMITTER
V
F
Input Forward Voltage I
F
= 60mA CNY17XM,
CNY17FXM
1.0 1.35 1.65 V
I
F
= 10mA MOC810XM 1.0 1.15 1.50
C
J
Capacitance V
F
= 0 V, f = 1.0MHz All 18 pF
I
R
Reverse Leakage
Current
V
R
= 6V All 0.001 10 µA
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter I
C
= 1.0mA, I
F
= 0 All 70 100
V
BV
CBO
Collector to Base I
C
= 10µA, I
F
= 0 CNY171M/2M/3M/4M 70 120
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 10
I
CEO
Leakage Current
Collector to Emitter
V
CE
= 10 V, I
F
= 0 All 1 50 nA
I
CBO
Collector to Base V
CB
= 10 V, I
F
= 0 CNY171M/2M/3M/4M 20 nA
C
CE
Capacitance
Collector to Emitter V
CE
= 0, f = 1MHz All 8 pF
C
CB
Collector to Base V
CB
= 0, f = 1MHz CNY171M/2M/3M/4M 20 pF
C
EB
Emitter to Base V
EB
= 0, f = 1MHz CNY171M/2M/3M/4M 10 pF
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation Voltage f = 60 Hz, t = 1 sec.,
I
I-O
≤ 2µA
(4)
7500 Vac(pk)
R
ISO
Isolation Resistance V
I-O
= 500 VDC
(4)
10
11
Ω
C
ISO
Isolation Capacitance V
I-O
= Ø, f = 1MHz
(4)
0.2 pF
Symbol DC Characteristics Test Conditions Min. Typ.* Max. Units
COUPLED
(CTR)
(2)
Output Collector
Current
MOC8106M I
F
= 10mA, V
CE
= 10V 50 150 %
MOC8107M
100 300
CNY17F1M I
F
= 10mA, V
CE
= 5V 40 80
CNY17F2M 63 125
CNY17F3M 100 200
CNY17F4M 160 320
CNY171M 40 80
CNY172M 63 125
CNY173M 100 200
CNY174M 160 320
V
CE(sat)
Collector-Emitter
Saturation Voltage
CNY17XM/FXM I
C
= 2.5mA, I
F
= 10mA 0.4 V
MOC8106M/7M I
C
= 500µA, I
F
= 5.0mA