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©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC810XM Rev. 1.1.1 4
CNY17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers
Electrical Characteristics
(Continued) (T
A
= 25°C Unless otherwise specified.)
(1)
Transfer Characteristics
(Continued)
(3)
*All typicals at T
A
= 25°C
Notes:
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For test circuit setup and waveforms, refer to Figures 10 and 11.
4. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.
Symbol AC Characteristics
(4)
Test Conditions Min. Typ.* Max. Units
NON-SATURATED SWITCHING TIME
t
on
Tur n-On Time All Devices I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
210µs
t
off
Tur n-Off Time All Devices I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
310µs
t
d
Delay Time CNY17XM/XFM I
F
= 10mA, V
CC
= 5V, R
L
= 75
Ω
5.6 µs
t
r
Rise Time All Devices I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
1µs
CNY17XM/FXM I
F
= 10mA, V
CC
= 5V, R
L
= 75Ω 4.0
t
s
Storage Time CNY17XM/FXM I
F
= 10mA, V
CC
= 5V, R
L
= 75Ω 4.1 µs
t
f
Fall Time All Devices I
C
= 2.0mA, V
CC
= 10V, R
L
= 100Ω 2µs
CNY17XM/FXM I
F
= 10mA, V
CC
= 5V, R
L
= 75Ω 3.5
SATURATED SWITCHING TIMES
t
on
Tur n-on Time CNY171M/F1M I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ 5.5 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ 8.0
t
r
Rise Time CNY171M/F1M I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ 4.0 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ 6.0
t
d
Delay Time CNY171M/F1M I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ 5.5 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ 8.0
t
off
Tur n-off Time CNY171M/F1M I
F
= 20mA, V
CE
= 0.4V 34 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I
F
= 10mA, V
CE
= 0.4V 39
t
f
Fall Time CNY171M/F1M I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ 20.0 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ 24.0
t
s
Storage Time CNY171M/F1M I
F
= 20mA, V
CC
= 5V, R
L
= 1kΩ 34.0 µs
CNY172M/3M/4M
CNY17F2M/F3M/F4M
I
F
= 10mA, V
CC
= 5V, R
L
= 1kΩ 39.0