Datasheet

D44H8 / NZT44H8 / D44H11 — NPN Power Amplifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
D44H8 / NZT44H8 / D44H11 Rev. B2 1
February 2010
D44H8 / NZT44H8 / D44H11
NPN Power Amplifier
Features
• This device is designed for power amplifier, regulator and switching circuits where speed is important.
• Sourced from process 4Q.
Absolute Maximum Ratings* T
A
=25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T
A
=25°C unless otherwise noted
*Device mounted on FR-4 PCB 36mm X 18mm X 1.5mm; mounting pad for the collector lead min. 6cm
2
.
Symbol Parameter
Value
Units
D44H8
NZT44H8
D44H11
V
CEO
Collector-Emitter Voltage 60 80 V
I
C
Collector Current - Continuous 8.0 10.0 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter
Max.
Units
D44H8
D44H11
*NZT44H8
P
D
Total Device Dissipation
Derate above 25°C
60
480
1.5
12
W
mW/°C
R
θJC
Thermal Resistance, Junction to Case 2.1 °C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 62.5 83.3 °C/W
C
B
C
E
B C E
SOT-223
TO-220
D44H8 / D44H11 NZT44H8