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D45H8 / NZT45H8 — PNP Power Amplifier

D45H8 / NZT45H8 Rev. 1.1.0 1

March 2014

D45H8 / NZT45H8

PNP Power Amplifier

Ordering Information

Absolute Maximum Ratings

(1),(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T

= 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

Figure 1. D45H8 Device Package Figure 2. NZT45H8 Device Package

Part Number Marking Package Packing Method

D45H8 D45H8 TO-220 3L Rail

NZT45H8 45H8 SOT-223 4L Tape and Reel

Symbol Parameter Value Unit

CEO

Collector-Emitter Voltage -60 V

Collector Current - Continuous -8 mA

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TO-220

SOT-223

Description

This device is designed for power amplifier, regulator,

and switching circuits where speed is important.

Sourced from process 5Q.

Summary of content (7 pages)

PAGE 1
D45H8 / NZT45H8 PNP Power Amplifier Description This device is designed for power amplifier, regulator, and switching circuits where speed is important. Sourced from process 5Q. C B E C E C SOT-223 TO-220 Figure 1. D45H8 Device Package B Figure 2.
PAGE 2
Values are at TA = 25°C unless otherwise noted. Symbol PD Max. Parameter Unit D45H8 NZT45H8 Total Device Dissipation 60.0 1.5 W 12 mW/°C Derate Above 25°C 480 RθJC Thermal Resistance, Junction to Case 2.1 RθJA Thermal Resistance, Junction to Ambient 62.5 °C/W °C/W 83.3 Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted.
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VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 200 Vce = 5V 180 160 0.8 125 °C 140 120 25 °C 125 ºC 80 60 0.2 - 40 °C 40 0.01 0.02 0.05 0.1 0.2 0.5 1 2 I C - COLLECTOR CURRENT (A) 5 10 - 40 ºC 0 0.1 1 I C - COLLECTOR CURRENT (A) 10 15 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON)- BASE-EMITTER ON VOLTAGE (V) 1.6 25 °C 0.4 100 VBESAT- BASE-EMITTER VOLTAGE (V) β = 10 0.6 Figure 3. Typical Pulsed Current Gain vs.
PAGE 4
Figure 10. Maximum Power Dissipation vs. Ambient Temperature PD - POWER DISSIPATION (W) Figure 9. Maximum Power Dissipation vs. Case Temperature 1.5 1.25 1 SOT-223 0.75 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Figure 11. Power Dissipation vs. Ambient Temperature Figure 12. Thermal Response in TO-220 Package © 1997 Fairchild Semiconductor Corporation D45H8 / NZT45H8 Rev. 1.1.0 www.fairchildsemi.
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D45H8 / NZT45H8 — PNP Power Amplifier Physical Dimensions TO-220 3L Figure 13. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 6
D45H8 / NZT45H8 — PNP Power Amplifier Physical Dimensions (Continued) SOT-223 Figure 14. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 7
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