Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCA20N60F, MOSFET

December 2013

FCA20N60F Rev C2

www.fairchildsemi.com

FCA20N60F

N-Channel SuperFET

FRFET

MOSFET

600 V, 20 A, 190 mΩ

Features

Description

SuperFET

MOSFET is Fairchild Semiconductor’s first

generation of high voltage super-junction (SJ) MOSFET family

that is utilizing charge balance technology for outstanding low

on-resistance and lower gate charge performance. This

technology is tailored to minimize conduction loss, provide

superior switching performance, dv/dt rate and higher

avalanche energy. Consequently, SuperFET MOSFET is very

suitable for the switching power applications such as PFC,

server/telecom power, FPD TV power, ATX power and industrial

power applications. SuperFET FRFET

MOSFET’s optimized

body diode reverse recovery performance can remove

additional component and improve system reliability.

Absolute Maximum Ratings

= 25°C unless otherwise noted.

TO-3PN

FCA20N60F — N-Channel SuperFET

FRFET

MOSFET

• 650 V @ T

= 150°C

•

Typ. R

DS(on)

= 150 mΩ

• Fast Recovery Type (Typ. T

= 160 ns )

• Ultra Low Gate Charge (Typ. Q

= 75 nC )

•

Low Effective Output Capacitance (Typ. C

oss(eff.)

= 165 pF )

• 100% Avalanche Tested

• RoHS Compliant

Applications

• LCD / LED / PDP TV

• Solar Inverter

• AC-DC Power Supply

Thermal Characteristics

Symbol Parameter FCA20N60F Unit

DSS

Drain-Source Voltage 600 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

12.5

Drain Current - Pulsed

(Note 1)

GSS

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

690 mJ

Avalanche Current (Note 1) 20 A

Repetitive Avalanche Energy (Note 1) 20.8 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 50 V/ns

Power Dissipation

= 25°C)

- Derate . bove 25°C

208

1.67

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter FCA20N60F Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.6 °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max. 40 °C/W

Summary of content (8 pages)

PAGE 1
FCA20N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
PAGE 2
Part Number FCA20N60F Top Mark FCA20N60F Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 2 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250μs Pulse Test o 150 C 1 10 o 25 C o -55 C 0 10 * Note: 1. VDS = 40V o 2. TC = 25 C -1 0 10 2. 250μs Pulse Test 1 10 10 8 2 10 IDR , Reverse Drain Current [A] 0.3 VGS = 10V 0.2 VGS = 20V 0.1 1 10 o 150 C 0 10 o 25 C * Notes : 1. VGS = 0V 2.
PAGE 4
(Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 20 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 150 200 Figure 10. Maximum Drain Current vs.
PAGE 5
FCA20N60F — N-Channel SuperFET® FRFET® MOSFET 50KΩ 50K Ω 200nF 200n F 12V VGS Same Same Type as DU DUT T Qg 10V 300nF 300n F VDS VGS Qgs Qgd DUT DU T IG = const. Charrge Cha Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT DUT VGS 10% 10% td(on d( on)) tr td(o d( of f) t on t of offf tf Figure 13.
PAGE 6
FCA20N60F — N-Channel SuperFET® FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FCA20N60F — N-Channel SuperFET® FRFET® MOSFET Mechanical Dimensions Figure 16. TO3, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.