Datasheet

tm
March 2011
FCA36N60NF N-Channel SupreMOS
®
, FRFET
®
,MOSFET
©2011 Fairchild Semiconductor Corporation
FCA36N60NF Rev. A
www.fairchildsemi.com1
SupreMOS
®
FCA36N60NF
N-Channel SupreMOS
®
, FRFET
®
,MOSFET
600V, 36A, 95mΩ
Features
•R
DS(on)
= 80mΩ ( Typ.)@ V
GS
= 10V, I
D
= 18A
• Ultra Low Gate Charge ( Typ. Qg = 86nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
Description
The SupreMOS
®
MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based tech-
nologies. By utilizing this advanced technology and precise pro-
cess control, SupreMOS
®
provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS
®
MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
D
G
S
GSD
TO-3PN
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol Parameter FCA36N60NF Units
V
DSS
Drain to Source Voltage 600 V
V
GSS
Gate to Source Voltage ±30 V
I
D
Drain Current
Continuous (T
C
= 25
o
C) 34.9
A
Continuous (T
C
= 100
o
C) 22
I
DM
Drain Current Pulsed (Note 1) 104.7 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 1800 mJ
I
AR
Avalanche Current 12 A
E
AR
Repetitive Avalanche Energy 3.12 mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3) 50
V/ns
MOSFET dv/dt Ruggedness 100
P
D
Power Dissipation
(T
C
= 25
o
C) 312 W
Derate above 25
o
C2.6W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter FCA36N60NF Units
R
θJC
Thermal Resistance, Junction to Case 0.40
o
C/WR
θCS
Thermal Resistance, Case to Heat Sink (Typical) 0.24
R
θJA
Thermal Resistance, Junction to Ambient 40
*Drain current limited by maximum junction temperature