Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCA47N60_F109, MOSFET

December 2013

FCA47N60 / FCA47N60_F109 — N-Channel SuperFET

MOSFET

FCA47N60 / FCA47N60_F109 Rev. C2

www.fairchildsemi.com

FCA47N60 / FCA47N60_F109

N-Channel SuperFET

MOSFET

600 V, 47 A, 70 mΩ

Features

•650 V @ T

= 150°C

•Typ. R

DS(on)

= 58 mΩ

• Ultra Low Gate Charge (Typ. Q

= 210 nC)

• Low Effective Output Capacitance (Typ. C

oss(eff.)

= 420 pF)

• 100% Avalanche Tested

Application

• Solar Invertor

• AC-DC Power Supply

Description

SuperFET

MOSFET is Fairchild Semiconductor’s first genera-

tion of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance. This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance, dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server/telecom power, FPD

TV power, ATX power and industrial power applications.

TO-3PN

Absolute Maximum Ratings

Thermal Characteristics

Symbol Parameter FCA47N60 FCA47N60_F109 Unit

DSS

Drain-Source Voltage 600 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

29.7

Drain Current - Pulsed (Note 1)

141

GSS

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy (Note 2) 1800 mJ

Avalanche Current (Note 1) 47 A

Repetitive Avalanche Energy (Note 1) 41.7 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate above 25°C

417

3.33

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter Typ. Max. Unit

θJC

Thermal Resistance, Junction-to-Case, Max. -- 0.3 °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max. -- 41.7 °C/W

Summary of content (8 pages)

PAGE 1
FCA47N60 / FCA47N60_F109 N-Channel SuperFET® MOSFET 600 V, 47 A, 70 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
PAGE 2
Device Marking FCA47N60 Device FCA47N60 Package TO-3PN Reel Size - Tape Width - Quantity 30 FCA47N60 FCA47N60_F109 TO-3PN - - 30 Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 10 2 ID , Drain Current [A] 2 1 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 0 10 -1 0 10 10 150℃ 1 10 -55℃ ※ Note 1. VDS = 40V 2. 250μ s Pulse Test 0 10 2 1 10 25℃ 10 4 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 47 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9.
PAGE 5
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2010 Fairchild Semiconductor Corporation FCA47N60 / FCA47N60_F109 Rev. C2 5 www.fairchildsemi.
PAGE 6
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Figure 15.
PAGE 7
FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET Mechanical Dimensions TO-3PN 3L Figure 16. 3LD, T03, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.