Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCA47N60, MOSFET

FCH47N60 / FCA47N60 Rev.B

FCH47N60 / FCA47N60

SuperFET

December 2006

FCH47N60 / FCA47N60

Features

•650V @T

= 150°C

• Typ. Rds(on)=0.058Ω

• Ultra low gate charge (typ. Qg=210nC)

• Low effective output capacitance (typ. Coss.eff=420pF)

• 100% avalanche tested

Description

SuperFET

is, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

Absolute Maximum Ratings

Thermal Characteristics

TO-247

FDH Series

GSD

TO-3P

FDA Series

Symbol Parameter FCH47N60 FCA47N60 Unit

DSS

Drain-Source Voltage 600 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

29.7

Drain Current - Pulsed

(Note 1)

141

GSS

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

1800 mJ

Avalanche Current (Note 1) 47 A

Repetitive Avalanche Energy (Note 1) 41.7 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate above 25°C

417

3.33

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter Typ. Max. Unit

θJC

Thermal Resistance, Junction-to-Case -- 0.3 °C/W

θCS

Thermal Resistance, Case-to-Sink 0.24 -- °C/W

θJA

Thermal Resistance, Junction-to-Ambient -- 41.7 °C/W

Summary of content (10 pages)

PAGE 1
SuperFET FCH47N60 / FCA47N60 Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
PAGE 2
Device Marking Device Package Reel Size Tape Width Quantity FCH47N60 FCH47N60 TO-247 - - 30 FCA47N60 FCA47N60 TO-3P - - 30 FCA47N60 FCA47N60_F109 TO-3PN - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V ID = 250μA, Referenced to 25°C -- 0.
PAGE 3
FCH47N60 / FCA47N60 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 2 ID , Drain Current [A] 2 1 10 * Notes : 1. 250μs Pulse Test 0 10 o 2. TC = 25 C -1 0 10 10 o 150 C 1 10 o -55 C * Note 1. VDS = 40V 0 2. 250μs Pulse Test 10 2 1 10 o 25 C 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 0.20 0.
PAGE 4
FCH47N60 / FCA47N60 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 47 A 0.8 -100 -50 0 50 100 150 0.
PAGE 5
FCH47N60 / FCA47N60 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH47N60 / FCA47N60 Rev. B 5 www.fairchildsemi.
PAGE 6
FCH47N60 / FCA47N60 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e
PAGE 7
FCH47N60 / FCA47N60 Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters FCH47N60 / FCA47N60 Rev. B 7 www.fairchildsemi.
PAGE 8
FCH47N60 / FCA47N60 Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FCH47N60 / FCA47N60 Rev. B 8 www.fairchildsemi.
PAGE 9
FCH47N60 / FCA47N60 Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters FCH47N60 / FCA47N60 Rev. B 9 www.fairchildsemi.
PAGE 10
FCH47N60 / FCA47N60 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.