Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCB20N60F_F085, MOSFET

December

2013

FCB20N60F_F085 N-Channel

MOSFET

FCB20N60F_F085 Rev. C1

www.fairchildsemi.com1

FCB20N60F_F085

N-Channel

MOSFET

600V, 20A, 190mΩ

Features

 Typ r

DS(on)

= 171mΩ at V

= 10V, I

= 20A

 Typ Q

g(tot)

= 78nC at V

= 10V, I

= 20A

 UIS Capability

 RoHS Compliant

 Qualified to AEC Q101

Description

SuperFET

is Fairchild’s proprietary new generation of high

voltage MOSFETs utilizing an advanced charge balance

mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is suitable for various automotive

DC/DC power conversion.

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain to Source Voltage 600 V

Gate to Source Voltage ±30 V

Drain Current - Continuous (V

=10) (Note 1) T

= 25°C 20

Pulsed Drain Current T

= 25°C See Figure4

Single Pulse Avalanche Energy (Note 2) 217.8 mJ

Power Dissipation 405 W

Derate above 25

C2.7W/

, T

STG

Operating and Storage Temperature -55 to + 150

θJC

Thermal Resistance Junction to Case 0.37

C/W

θJA

Maximum Thermal Resistance Junction to Ambient (Note 3) 43

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCB20N60F FCB20N60F_F085 TO-263AB 330mm 24mm 800 units

Notes:

1: Current is limited by bondwire configuration.

2: Starting T

= 25°C, L = 10mH, I

= 6.6A, V

= 100V during inductor charging and V

= 0V during time in avalanche

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins.

θJC

is guaranteed by design while R

θJA

is determined by the user's board design. The maximum rating

presented here is based on mounting on a 1 in

pad of 2oz copper.

Forcurrentpackagedrawing,pleaserefertotheFairchild

websiteatwww.fairchildsemi.com/packaging

Applications

 Automotive On Board Charger

 Automotive DC/DC converter for HEV

Summary of content (6 pages)

PAGE 1
FCB20N60F_F085 N-Channel MOSFET December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190mΩ D D Features Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for outstanding low on-resistance and For current package drawing, please refer to the Fairchild websi
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current ID = 250μA, VGS = 0V VDS = 600V, VGS = 0V 600 - - V - - 10 μA TJ = 25oC TJ = 150oC(Note 4) VGS = ±30V - - 500 μA - - ±100 nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA ID = 20A, VGS= 10V 3.0 4.3 5.
PAGE 3
0 1.0 25 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TC, CASE TEMPERATURE(oC) CURRENT LIMITED BY SILICON VGS = 10V CURRENT LIMITED BY PACKAGE 20 15 10 5 0 150 25 50 75 100 125 TC, CASE TEMPERATURE(oC) 150 Figure 2. Maximum Continuous Drain Current vs Case Temperature Figure 1. Normalized Power Dissipation vs Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 DUTY CYCLE - DESCENDING ORDER 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.
PAGE 4
100 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.1 0.01 1 1ms 10ms SINGLE PULSE TJ = MAX RATED TC = 25oC 100ms VDD = 20V 10 TJ = 150oC TJ = -55oC TJ = 25oC 1 2 10 100 1000 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 100 1 0.0 0.2 0.4 0.6 ID, DRAIN CURRENT (A) TJ = 25 oC 10 0.8 1.0 1.2 1.4 6V 80μs PULSE WIDTH Tj=25oC 0.1 Figure 7.
PAGE 5
1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.8 VGS = VDS NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.2 2.4 2.0 1.6 1.2 ID = 20A VGS = 10V 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) Figure 11. Normalized Rdson vs Junction Temperature 0.9 0.8 0.7 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 12. Normalized Gate Threshold Voltage vs Temperature 1.
PAGE 6
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.