Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCB20N60FTM, MOSFET

October 2013

FCB20N60F — N-Channel SuperFET

FRFET

MOSFET

FCB20N60F Rev. C1

www.fairchildsemi.com

FCB20N60F

N-Channel SuperFET

FRFET

MOSFET

600 V, 20 A, 190 m

Features

• 650 V @T

= 150 °C

•Typ. R

DS(on)

= 150 m

• Ultra Low Gate Charge (Typ. Q

= 75 nC)

• Low Effective Output Capacitance (Typ. C

oss

.eff = 165 pF)

• 100% Avalanche Tested

• RoHS Compliant

Applications

Description

SuperFET

MOSFET is Fairchild Semiconductor’s first genera-

tion of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance. This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance, dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server/telecom power, FPD

TV power, ATX power and industrial power applications. Super-

FET FRFET

MOSFET’s optimized body diode reverse recov-

ery performance can remove additional component and

improve system reliability.

• Lighting • AC-DC Power Supply

• Solar Inverter

MOSFET Maximum Ratings T

= 25

C unless otherwis noted

Thermal Characteristics

Symbol Parameter FCB20N60FTM Unit

DSS

Drain to Source Voltage 600 V

Drain Current

- Continuous (T

= 25

C) 20

- Continuous (T

= 100

C) 12.5

Drain Current - Pulsed (Note 1) 60 A

GSS

Gate to Source Voltage ±30 V

Single Pulsed Avalanche Energy (Note 2) 690 mJ

Avalanche Current (Note 1) 20 A

Repetitive Avalanche Energy (Note 1) 20.8 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 50 V/ns

Power Dissipation

= 25

C) 208 W

- Derate above 25

C1.67W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol Parameter FCB20N60FTM Unit

JC

Thermal Resistance, Junction to Case, Max. 0.6

C/W

JA

Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5

Thermal Resistance, Junction to Ambient (1 in

pad of 2 oz copper), Max. 40

-PAK

Summary of content (8 pages)

PAGE 1
FCB20N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 20 A, 190 m Features Description • 650 V @TJ = 150 °C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
PAGE 2
Device Marking FCB20N60F Device FCB20N60FTM Package D2-PAK Reel Size 330mm Tape Width 24m Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 2 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250s Pulse Test o 150 C 1 10 o 25 C o -55 C 0 10 * Note: 1. VDS = 40V o 2. TC = 25 C -1 0 10 2. 250s Pulse Test 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2 0.3 VGS = 10V 0.2 VGS = 20V 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 A Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 20 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9.
PAGE 5
FCB20N60F — N-Channel SuperFET® FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14.
PAGE 6
FCB20N60F — N-Channel SuperFET® FRFET® MOSFET Figure 15.
PAGE 7
FCB20N60F — N-Channel SuperFET® FRFET® MOSFET Mechanical Dimensions TO-263 2L (D2PAK) Figure 16. 2LD,TO263, Surface Mount Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.