Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCD7N60TM, MOSFET

December 2013

FCD7N60 — N-Channel SuperFET

MOSFET

FCD7N60 Rev. C1

www.fairchildsemi.com

FCD7N60

N-Channel SuperFET

MOSFET

600 V, 7 A, 600 mΩ

Features

•650 V @ T

= 150°C

•Typ. R

DS(on)

= 530 mΩ

• Ultra Low Gate Charge (Typ. Q

= 23 nC)

• Low Effective Output Capacitance (Typ. C

oss(eff.)

= 60 pF)

• 100% Avalanche Tested

•RoHS Compliant

Application

• LCD / LED TV and Monitor

• Lighting

• Solar Inverter

• AC-DC Power Supply

Description

SuperFET

MOSFET is Fairchild Semiconductor’s first genera-

tion of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance. This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance, dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server/telecom power, FPD

TV power, ATX power and industrial power applications.

D-PAK

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter

FCD7N60TM /

FCD7N60TM_WS

Unit

DSS

Drain to Source Voltage 600 V

Drain Current

- Continuous (T

= 25

C) 7

- Continuous (T

= 100

C) 4.4

Drain Current - Pulsed (Note 1) 21 A

GSS

Gate to Source Voltage ±30 V

Single Pulsed Avalanche Energy (Note 2) 230 mJ

Avalanche Current (Note 1) 7A

Repetitive Avalanche Energy (Note 1) 8.3 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 20 V/ns

Power Dissipation

= 25

C) 83 W

- Derate Above 25

C0.67W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FCD7N60TM /

FCD7N60TM_WS

Unit

θJC

Thermal Resistance, Junction to Case, Max. 1.5

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 83

Summary of content (8 pages)

PAGE 1
FCD7N60 N-Channel SuperFET® MOSFET 600 V, 7 A, 600 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
PAGE 2
Part Number FCD7N60TM Top Mark FCD7N60 Package D-PAK Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units FCD7N60TM_WS FCD7N60 D-PAK Tape and Reel 330 mm 16 mm 2500 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 1 10 ID , Drain Current [A] ID, Drain Current [A] 1 10 150℃ 25℃ 0 10 -55℃ ※ Note 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 3.5 A 0.5 0.0 -100 200 -50 0 o 2 100 us 1 7.5 ID, Drain Current [A] ID, Drain Current [A] 200 10.
PAGE 5
0KΩ 200nF 12V FCD7N60 — N-Channel SuperFET® MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14.
PAGE 6
FCD7N60 — N-Channel SuperFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FCD7N60 — N-Channel SuperFET® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.