Datasheet
December 2013
FCD9N60NTM — N-Channel SupreMOS
®
MOSFET
©2010 Fairchild Semiconductor Corporation
FCD9N60NTM Rev. C0
www.fairchildsemi.com
1
FCD9N60NTM
N-Channel SupreMOS
®
MOSFET
600 V, 9 A, 385 mΩ
Features
•R
DS(on)
= 330 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 4.5 A
•
Ultra Low Gate Charge (Typ. Q
g
= 17.8 nC)
• 100% Avalanche Tested
•RoHS Compliant
Description
The SupreMOS
®
MOSFET is Fairchild Semiconductor’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
D-PAK
G
S
D
G
S
D
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter
FCD9N60NTM Unit
V
DSS
Drain to Source Voltage 600 V
V
GSS
Gate to Source Voltage ±30 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C)
9.0
A
- Continuous (T
C
= 100
o
C)
5.7
I
DM
Drain Current - Pulsed (Note 1) 27 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 135 mJ
I
AR
Avalanche Current 9.0 A
E
AR
Repetitive Avalanche Energy 9.3 mJ
dv/dt
MOSFET dv/dt Ruggedness 100
V/ns
Peak Diode Recovery dv/dt (Note 3) 15
P
D
Power Dissipation
(T
C
= 25
o
C) 92.6 W
- Derate above 25
o
C0.74
o
CW/
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter
FCD9N60NTM Unit
R
θJC
Thermal Resistance, Junction to Case 1.35
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient 62.5
(Note 1)
(Note 1)
•
Low Effective Output Capacitance