Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCH041N60E, MOSFET

December 2013

FCH041N60E Rev. C1

www.fairchildsemi.com

FCH041N60E — N-Channel SuperFET

II Easy-Drive MOSFET

FCH041N60E

N-Channel SuperFET

II Easy-Drive MOSFET

600 V, 77 A, 41 mΩ

Features

•650 V @ T

= 150°C

•Typ. R

DS(on)

= 36 mΩ

• Ultra Low Gate Charge (Typ. Q

= 285 nC)

• Low Effective Output Capacitance (Typ. C

oss(eff.)

= 735 pF)

• 100% Avalanche Tested

• An Integrated Gate Resistor

•RoHS Compliant

Applications

• LCD / LED / PDP TV Lighting

• Solar Inverter

• AC-DC Power Supply

Description

SuperFET

II MOSFET is Fairchild Semiconductor’s brand-new

high voltage super-junction (SJ) MOSFET family that is utilizing

charge balance technology for outstanding low on-resistance

and lower gate charge performance. This technology is tailored

to minimize conduction loss, provide superior switching perfor-

mance, dv/dt rate and higher avalanche energy. Consequently,

SuperFET II MOSFET easy-drive series offers slightly slower

rise and fall times compared to the SuperFET II MOSFET

series. Noted by the "E" part number suffix, this family helps

manage EMI issues and allows for easier design implementa-

tion. For faster switching in applications where switching losses

must be at an absolute minimum, please consider the Super-

FET II MOSFET series.

TO-247

Absolute Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FCH041N60E Unit

DSS

Drain to Source Voltage 600 V

GSS

Gate to Source Voltage

- DC ±20

- AC (f > 1 Hz) ±30

Drain Current

- Continuous (T

= 25

C) 77

- Continuous (T

= 100

C) 48.7

Drain Current - Pulsed (Note 1) 231 A

Single Pulsed Avalanche Energy (Note 2) 2025 mJ

Avalanche Current (Note 1) 15 A

Repetitive Avalanche Energy (Note 1) 5.92 mJ

dv/dt

MOSFET dv/dt 100

V/ns

Peak Diode Recovery dv/dt (Note 3) 20

Power Dissipation

= 25

C) 592 W

- Derate Above 25

C4.74W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300

Symbol Parameter FCH041N60E Unit

θJC

Thermal Resistance, Junction to Case, Max. 0.21

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 40

Summary of content (9 pages)

PAGE 1
FCH041N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 77 A, 41 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
PAGE 2
Part Number FCH041N60E Top Mark FCH041N60E Package TO-247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max.
PAGE 3
Figure 1. On-Region Characteristics 300 300 VGS = 15.0V 10.0V 8.0V 6.0V 5.5V 5.0V 4.5V *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 ID, Drain Current[A] 100 ID, Drain Current[A] Figure 2. Transfer Characteristics 10 10 o 150 C o 25 C o 1 -55 C *Notes: 1. 250μs Pulse Test o 1 0.1 2. TC = 25 C 1 VDS, Drain to Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 VGS, Gate to Source Voltage[V] 500 IS, Reverse Drain Current [A] 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 39A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10.
PAGE 5
FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET Typical Characteristics (Continued) Figure 12. Transient Thermal Response Curve 0.5 o ZθJC(t), Thermal Response [ C/W] 0.5 0.1 0.2 PDM 0.1 0.01 t1 0.05 0.02 0.01 o 1. ZθJC(t) = 0.21 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 t2 *Notes: -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] 5 -1 10 0 10 www.fairchildsemi.
PAGE 6
FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2013 Fairchild Semiconductor Corporation FCH041N60E Rev. C1 6 www.fairchildsemi.
PAGE 7
FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16.
PAGE 8
FCH041N60E — N-Channel SuperFET® II Easy-Drive MOSFET Mechanical Dimensions Figure 17. TO-247, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.