Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCH47N60F_F133, MOSFET

October 2013

FCH47N60F — N-Channel SuperFET

FRFET

MOSFET

FCH47N60F Rev. C2

www.fairchildsemi.com

Absolute Maximum Ratings T

= 25

C unless otherwise noted

Symbol Parameter FCH47N60F_F133 Unit

DSS

Drain-Source Voltage 600 V

Drain Current - Continuous (T

= 25C)

- Continuous (T

= 100C)

29.7

Drain Current - Pulsed

(Note 1)

141

GSS

Gate-Source voltage  30 V

Single Pulsed Avalanche Energy

(Note 2)

1800 mJ

Avalanche Current

(Note 1)

47 A

Repetitive Avalanche Energy

(Note 1)

41.7 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

50 V/ns

Power Dissipation (T

= 25C)

- Derate above 25C

417

3.33

W/C

STG

Operating and Storage Temperature Range -55 to +150 C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 C

FCH47N60F

N-Channel SuperFET

FRFET

MOSFET

600 V, 47 A, 73 m

Features

• 650 V @ T

= 150 C

•Typ. R

DS(on)

= 58 m

• Ultra Low Gate Charge (Typ. Q

= 210 nC)

• Low Effective Output Capacitance (Typ. C

oss

eff. = 420 pF)

• 100% Avalanche Tested

• RoHS Compliant

Applications

• Solar Inverter

• AC-DC Power Supply

Description

SuperFET

MOSFET is Fairchild Semiconductor’s first genera-

tion of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance.This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance,dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server / telecom power, FPD

TV power, ATX power and industrial power applications. Super-

FET FRFET

MOSFET’s optimized body diode reverse recov-

ery performance can remove additional component and

improve system reliability.



Thermal Characteristics

Symbol Parameter FCH47N60F_F133 Unit

JC

Thermal Resistance, Junction-to-Case, Max. 0.3 C/W

JA

Thermal Resistance, Junction-to-Ambient, Max. 41.7 C/W

TO-247

Summary of content (8 pages)

PAGE 1
FCH47N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 47 A, 73 m Features Description • 650 V @ TJ = 150 C ® SuperFET MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance.This technology is tailored to minimize conduction loss, provide superior switching performance,dv/dt rate and higher avalanche energy.
PAGE 2
Device Marking FCH47N60F Device FCH47N60F_F133 Electrical Characteristics Symbol Package TO-247 Reel Size - Tape Width - Quantity 30 TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A, TJ = 25C 600 -- -- V VGS = 0V, ID = 250A, TJ = 150C -- 650 -- V ID = 250A, Referenced to 25C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 2 1 10 * Notes : 1. 250s Pulse Test o 2. TC = 25 C 0 10 -1 0 10 10 ID , Drain Current [A] 2 150C 1 10 -55C - Note 1. VDS = 40V 0 2. 250s Pulse Test 10 2 1 10 25C 10 4 VDS, Drain-Source Voltage [V] 8 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250A 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 23.5 A 0.5 0.0 -100 200 -50 0 TJ, Junction Temperature [C] 50 100 150 200 TJ, Junction Temperature [C] Figure 9. Safe Operating Area Figure 10.
PAGE 5
FCH47N60F — N-Channel SuperFET® FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 14.
PAGE 6
FCH47N60F — N-Channel SuperFET® FRFET® MOSFET Figure 15.
PAGE 7
FCH47N60F — N-Channel SuperFET® FRFET® MOSFET Mechanical Dimensions TO-247 3L Figure 16. TO-247,Molded, 3 Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.