Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCP11N60, MOSFET

FCP11N60 / FCPF11N60 / FCPF11N60T

November 2009

SuperFET

FCP11N60 / FCPF11N60 / FCPF11N60T

General Description

SuperFET

is, Fairchild’s proprietary, new generation of

high voltage MOSFET family that is utilizing an advanced

charge balance mechanism for outstanding low on-

resistance and lower gate charge performance.

This advanced technology has been tailo

red to minimize

conduction loss, provide superior switching performance,

and withstand extreme dv/dt rate and higher avalanche

energy. Consequently, SuperFET is very suitable for

various AC/DC power conversion in switching mode

operation for system miniaturization and higher efficiency.

Features

• 650V @ Tj = 150°C

• Typ. Rds(on) = 0.32Ω

• Ultra low gate charge (typ. Qg=40nC)

• Low effective output capacitance (typ. Coss.eff = 95pF)

• 100% avalanche tested

• RoHS Compliant

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter FCP11N60 FCPF11N60(T) Units

Drain Current

- Continuous (T

= 25°C)

11 11* A

- Continuous (T

= 100°C)

7 7* A

Drain Current - Pulsed

(Note 1)

33 33* A

GSS

Gate-Source Voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

340 mJ

Avalanche Current

(Note 1)

11 A

Repetitive Avalanche Energy

(Note 1)

12.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C)

125 36 W

- Derate above 25°C 1.0 0.29 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300 °C

Thermal Characteristics

Symbol Parameter FCP11N60 FCPF11N60(T) Units

θJC

Thermal Resistance, Junction-to-Case 1.0 3.5 °C/W

θCS

Thermal Resistance, Case-to-Sink 0.5 -- °C/W

θJA

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

●

▲

{

◀

●

▲

{

◀

* Drain current limited by maximum junction termperature.

G D S

TO-220AB

FCP Series

TO-220F

FCPF Series

Summary of content (11 pages)

PAGE 1
SuperFET TM FCP11N60 / FCPF11N60 / FCPF11N60T General Description Features SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge performance. • • • • • • This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
PAGE 2
Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V VGS = 0 V, ID = 250 μA, TJ = 150°C -- 650 -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 1 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250 μs Pulse Test o 2. TC = 25 C -1 10 -1 0 10 o 150 C o o 25 C 0 10 -55 C * Note 1. VDS = 40V 2. 250 μs Pulse Test -1 10 1 10 10 10 2 4 VDS, Drain-Source Voltage [V] 6 8 10 VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2.
PAGE 4
(Continued) 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.5 0.0 -100 200 -50 o 100 150 200 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs.
PAGE 5
FCP11N60 / FCPF11N60 / FCPF11N60T Typical Characteristics (Continued) 0 10 ZθJC(t), Thermal Response D = 0 .5 0 .2 10 * N o te s : o 1 . Z θ J C (t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 -1 0 .0 5 0 .0 2 PDM 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-1. Transient Thermal Response Curve for FCP11N60 D = 0 .
PAGE 6
FCP11N60 / FCPF11N60 / FCPF11N60T Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2009 Fairchild Semiconductor Corporation ID (t) VDS (
PAGE 7
FCP11N60 / FCPF11N60 / FCPF11N60T Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation Rev.
PAGE 8
FCP11N60 / FCPF11N60 / FCPF11N60T Mechanical Dimensions TO-220AB Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation Rev.
PAGE 9
3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation Rev.
PAGE 10
FCP11N60 / FCPF11N60 / FCPF11N60T Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation Rev.
PAGE 11
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