Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCP11N60F, MOSFET

November 2013

FCP11N60F — N-Channel SuperFET

FRFET

MOSFET

FCP11N60F Rev. C2

www.fairchildsemi.com

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FCP11N60F Unit

DSS

Drain to Source Voltage 600 V

Drain Current

- Continuous (T

= 25

C) 11

- Continuous (T

= 100

C) 7

Drain Current - Pulsed (Note 1) 33 A

GSS

Gate to Source Voltage ±30 V

Single Pulsed Avalanche Energy (Note 2) 340 mJ

Avalanche Current (Note 1) 11 A

Repetitive Avalanche Energy (Note 1) 12.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 4.5 V/ns

Power Dissipation

= 25

C) 125 W

- Derate above 25

C1.0W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol Parameter

FCP11N60F

Unit

θJC

Thermal Resistance, Junction to Case, Max 1.0

C/W

θJA

Thermal Resistance, Junction to Ambient, Max 62.5

C/W

FCP11N60F

N-Channel SuperFET

FRFET

MOSFET

600 V, 11 A, 380 mΩ

Features

•650 V @T

= 150°C

•Typ. R

DS(on)

= 320 mΩ

• Fast Recovery Type (t

= 120 ns)

• Ultra Low Gate Charge (Typ. Q

= 40 nC)

• Low Effective Output Capacitance (Typ. C

oss

.eff = 95 pF)

• 100% Avalanche Tested

• RoHS compliant

Application

Description

SuperFET

MOSFET is Fairchild Semiconductor’s first genera-

tion of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance. This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance, dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server/telecom power, FPD

TV power, ATX power and industrial power applications. Super-

FET FRFET

MOSFET’s optimized body diode reverse recov-

ery performance can remove additional component and

improve system reliability.

• LCD/LED/PDP TV • Solar Inverter

• Lighting • AC-DC Power Supply

TO-220

Summary of content (8 pages)

PAGE 1
FCP11N60F N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ Features Description • 650 V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
PAGE 2
Device Marking FCP11N60F Device FCP11N60F Package TO-220 Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Off Characteristics Parameter BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current Test Conditions Min. VGS = 0 V, ID = 250 μA, TC = 25oC Typ. Max.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 1 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250 μs Pulse Test o 2. TC = 25 C -1 10 10 o 150 C o o 25 C 0 10 -55 C * Note 1. VDS = 40V 2. 250 μs Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 5.5 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 2 ID, Drain Current [A] ID, Drain Current [A] 10.
PAGE 5
FCP11N60F — N-Channel SuperFET® FRFET® MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT 200nF Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2010 Fairchild Semiconductor Corporation FCP11N60F Rev. C2 5 www.fairchildsemi.
PAGE 6
FCP11N60F — N-Channel SuperFET® FRFET® MOSFET Figure 15.
PAGE 7
FCP11N60F — N-Channel SuperFET® FRFET® MOSFET Mechanical Dimensions TO-220 3L Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.