Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCP4N60, MOSFET

December 2013

FCP4N60 — N-Channel SuperFET

MOSFET

FCP4N60 Rev. C1

www.fairchildsemi.com

FCP4N60

N-Channel SuperFET

MOSFET

600 V, 3.9 A, 1.2 Ω

Features

•650 V @ T

= 150°C

•

Typ. R

DS(on)

= 1.0 Ω

• Ultra Low Gate Charge (Typ. Q

= 12.8 nC)

• Low Effective Output Capacitance (Typ. C

oss(eff.)

= 32 pF)

• 100% Avalanche Tested

•RoHS Compliant

Application

• LCD / LED / PDP TV and Monitor Lighting

•

Solar Inverter

•

AC-DC Power Supply

Description

SuperFET

MOSFET is Fairchild Semiconductor’s first gener-

ation of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance. This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance, dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server/telecom power, FPD

TV power, ATX power and industrial power applications.

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter

FCP4N60

Unit

θJC

Thermal Resistance, Junction to Case, Max.

2.5

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 83

TO-220

Symbol Parameter FCP4N60 Unit

DSS

Drain-Source Voltage 600 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

3.9

2.5

Drain Current - Pulsed

(Note 1)

11.7

GSS

Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy

(Note 2)

128 mJ

Avalanche Current

(Note 1)

3.9 A

Repetitive Avalanche Energy

(Note 1)

5.0 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation

= 25°C)

- Derate Above 25°C

0.4

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds.

300 °C

Summary of content (8 pages)

PAGE 1
FCP4N60 N-Channel SuperFET® MOSFET 600 V, 3.9 A, 1.2 Ω Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
PAGE 2
Part Number FCP4N60 Top Mark FCP4N60 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 250 µA, TJ = 25°C 600 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA, TJ = 150°C -- 650 -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics VGS 1 10 Top : 15.0 V 10.0 V 8.0V 7.5 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID , Drain Current [A] ID, Drain Current [A] 10 Figure 2. Transfer Characteristics 1 * Notes : 1. 250µs Pulse Test o 150 C 0 10 o 25 C o -55 C * Note 1. VDS = 40V o 2. TC = 25 C 0.1 2. 250µs Pulse Test -1 0.1 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 *Notes : 1. VGS = 0 V 0.9 2. ID = 250µA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 *Notes : 1. VGS = 10 V 0.5 2. ID = 2.0 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 ο TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9.
PAGE 5
FCP4N60 — N-Channel SuperFET® MOSFET 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14.
PAGE 6
FCP4N60 — N-Channel SuperFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 7
FCP4N60 — N-Channel SuperFET® MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.