Datasheet

©2008 Fairchild Semiconductor Corporation
FCP4N60 Rev. C1
www.fairchildsemi.com
4
FCP4N60 — N-Channel SuperFET
®
MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
*Notes :
1. V
GS
= 0 V
2. I
D
= 250µA
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
ο
C]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes :
1. V
GS
= 10 V
2. I
D
= 2.0 A
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
25 50 75 100 125 150
0
1
2
3
4
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10 us
Operation in This Area
is Limited by R
DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
10
5-
10
4-
10
-3
10
-2
10
1-
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
θ JC
(t) = 2.5
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ JC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
t
1
P
DM
t
2
Z
JC
(t), Thermal Response [
o
C/W]