Datasheet

©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FCP16N60 / FCPF16N60 Rev. B1
FCP16N60 / FCPF16N60 600V N-Channel MOSFET
FCP16N60 / FCPF16N60
600V N-Channel MOSFET
Features
•650V @T
J
= 150°C
•Typ. R
ds(on)
= 0.22Ω
• Ultra low gate charge (typ. Qg=55nC)
• Low effective output capacitance (typ. Coss.eff=110pF)
• 100% avalanche tested
Description
SuperFET
TM
is, Fairchild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has be
en tailored to minimize
conduction loss, provide superior switch
ing performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FCP Series
G
S
D
TO-220F
FCPF Series
G
S
D
D
G
S
Symbol Parameter FCP16N60 FCPF16N60 Unit
V
DSS
Drain-Source Voltage 600 V
I
D
Drain Current - Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
16
10.1
16*
10.1*
A
A
I
DM
Drain Current - Pulsed
(Note 1)
48 48*
A
V
GSS
Gate-Source voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
450 mJ
I
AR
Avalanche Current (Note 1) 16 A
E
AR
Repetitive Avalanche Energy (Note 1) 20.8 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
167
1.33
37.9
0.3
W
W/°C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 °C
Symbol Parameter FCP16N60 FCPF16N60 Unit
R
θJC
Thermal Resistance, Junction-to-Case 0.75 3.3 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
*Drain current limited by maximum junction temperature
December 2008
SuperFET
TM
• RoHS Compliant