Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCPF190N60E, MOSFET

December 2013

FCP190N60E / FCPF190N60E — N-Channel SuperFET

II Easy-Drive MOSFET

FCP190N60E / FCPF190N60E Rev. C10

www.fairchildsemi.com

FCP190N60E / FCPF190N60E

N-Channel SuperFET

II Easy-Drive MOSFET

600 V, 20.6 A, 190 mΩ

Features

•650 V @ T

= 150°C

•Typ. R

DS(on)

= 160 mΩ

• Ultra Low Gate Charge (Typ. Q

= 63 nC)

• Low Effective Output Capacitance (Typ. C

oss(eff.)

= 178 pF)

• 100% Avalanche Tested

• An Integrated Gate Resistor

•RoHS Compliant

Applications

• LCD / LED / PDP TV Lighting

• Solar Inverter

• AC-DC Power Supply

Description

SuperFET

II MOSFET is Fairchild Semiconductor’s brand-new

high voltage super-junction (SJ) MOSFET family that is utilizing

charge balance technology for outstanding low on-resistance

and lower gate charge performance. This technology is tailored

to minimize conduction loss, provide superior switching perfor-

mance, dv/dt rate and higher avalanche energy. Consequently,

SuperFET II MOSFET easy-drive series offers slightly slower

rise and fall times compared to the SuperFET II MOSFET

series. Noted by the "E" part number suffix, this family helps

manage EMI issues and allows for easier design implementa-

tion. For faster switching in applications where switching losses

must be at an absolute minimum, please consider the Super-

FET II MOSFET series.

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter FCP190N60E FCPF190N60E Unit

DSS

Drain to Source Voltage 600 V

GSS

Gate to Source Voltage

- DC ±20 V

- AC (f > 1 Hz) ±30 V

Drain Current

- Continuous (T

= 25

C) 20.6 20.6*

- Continuous (T

= 100

C) 13.1 13.1*

Drain Current - Pulsed (Note 1) 61.8 61.8* A

Single Pulsed Avalanche Energy (Note 2) 400 mJ

Avalanche Current (Note 1) 4.0 A

Repetitive Avalanche Energy (Note 1) 2.1 mJ

dv/dt

MOSFET dv/dt 100

V/ns

Peak Diode Recovery dv/dt (Note 3) 20

Power Dissipation

= 25

C) 208 39 W

- Derate Above 25

C 1.67 0.31 W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FCP190N60E FCPF190N60E

Unit

θJC

Thermal Resistance, Junction to Case, Max. 0.6 3.2

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5 62.5

TO-220

TO-220F

Summary of content (10 pages)

PAGE 1
FCP190N60E / FCPF190N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 20.6 A, 190 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
PAGE 2
Part Number FCP190N60E Top Mark FCP190N60E Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FCPF190N60E FCPF190N60E TO-220F Tube N/A N/A 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - ID = 10 mA, Referenced to 25oC - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current [A] ID, Drain Current [A] 50 1 o 150 C 10 o 25 C o -55 C *Notes: 1. 250μs Pulse Test o 0.3 0.1 2. TC = 25 C 1 VDS, Drain to Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 7 VGS, Gate to Source Voltage[V] IS, Reverse Drain Current [A] 100 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.15 RDS(on), [Normalized] Drain to Source On-Resistance BVDSS, [Normalized] Drain to Source Breakdown Voltage 1.20 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 10mA 0.90 0.85 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 10A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area for FCP190N60E 100 2.
PAGE 5
FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve for FCP190N60E θ JC o ZθJC (t), Thermal Response Thermal Response [Z [ ]C/W] 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 t2 *Notes: 0.02 o 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.
PAGE 6
FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET IG = const. Figure 15. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 16. Resistive Switching Test Circuit & Waveforms VGS Figure 17. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FCP190N60E / FCPF190N60E Rev. C10 6 www.fairchildsemi.
PAGE 7
FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 18.
PAGE 8
FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET Mechanical Dimensions Figure 19. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FCP190N60E / FCPF190N60E — N-Channel SuperFET® II Easy-Drive MOSFET Mechanical Dimensions Figure 20. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.