Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFCPF7N60NT, MOSFET

December 2013

FCPF7N60NT — N-Channel SupreMOS

MOSFET

FCPF7N60NT Rev. C2

www.fairchildsemi.com

FCPF7N60NT

N-Channel MOSFET

600 V, 6.8 A, 0.52 Ω

Features

•Typ R

DS(on)

= 460mΩ

• Ultra Low Gate Charge (typ. Q

= 17.8 nC)

• Low Effective Output Capacitance (typ. C

oss(eff.)

= 91 pF)

• 100% Avalanche Tested

• RoHS Compliant

Application

• Solar Inverter

• AC-DC Power Supply

Description

The SupreMOS

MOSFET is Fairchild Semiconductor’s next

generation of high voltage super-junction (SJ) technology em-

ploying a deep trench filling process that differentiates it from the

conventional SJ MOSFETs. This advanced technology and pre-

cise process control provides lowest Rsp on-resistance, superior

switching performance and ruggedness. SupreMOS MOSFET is

suitable for high frequency switching power converter applica-

tions such as PFC, server/telecom power, FPD TV power, ATX

power, and industrial power applications.

TO-220F

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol Parameter FCPF7N60NT Units

DSS

Drain to Source Voltage 600 V

GSS

Gate to Source Voltage ±30 V

Drain Current

-Continuous (T

= 25

C) 6.8*

-Continuous (T

= 100

C) 4.3*

Drain Current - Pulsed (Note 1) 20.4 A

Single Pulsed Avalanche Energy (Note 2) 79.4 mJ

Avalanche Current 6.8 A

Repetitive Avalanche Energy 0.6 mJ

dv/dt

MOSFET dv/dt Ruggedness 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 4.9 V/ns

Power Dissipation

= 25

C) 30.5 W

- Derate above 25

C0.24W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol Parameter FCPF7N60NT Units

θJC

Thermal Resistance, Junction to Case, Max. 4.1

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5

Summary of content (9 pages)

PAGE 1
FCPF7N60NT N-Channel MOSFET 600 V, 6.8 A, 0.52 Ω Features Description • Typ RDS(on) = 460mΩ The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
PAGE 2
Device Marking FCPF7N60NT Device FCPF7N60NT Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics 30 ID, Drain Current[A] VGS = 15.0 V 10.0 V 6.0 V 4.5 V 4.0 V 10 ID, Drain Current[A] Figure 2. Transfer Characteristics 60 *Notes: 1. 250μs Pulse Test o 150 C o -55 C o 25 C 1 o 2. TC = 25 C 1 0.5 0.1 1 10 VDS, Drain-Source Voltage[V] 0.2 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage *Notes: 1. VDS = 20V 2. 250μs Pulse Test 2 4 6 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.8 0.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.5 0.0 -80 160 Figure 9. Maximum Safe Operating Area _ FCPF7N60NT *Notes: 1. VGS = 10V 2. ID = 3.4A -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10.
PAGE 5
FCPF7N60NT — N-Channel SupreMOS® MOSFET Typical Characteristics (Continued) Z θJC Thermal Response [ZθJC] (t), Thermal Response [oC/W] Figure 11. Transient Thermal Response Curve _ FCPF7N60NT 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 *Notes: t2 o 1. ZθJC(t) = 4.1 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.
PAGE 6
FCPF7N60NT — N-Channel SupreMOS® MOSFET Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2012 Fairchild Semiconductor Corporation FCPF7N60NT Rev. C2 6 www.fairchildsemi.
PAGE 7
FCPF7N60NT — N-Channel SupreMOS® MOSFET Figure 15.
PAGE 8
FCPF7N60NT — N-Channel SupreMOS® MOSFET Mechanical Dimensions TO-220F 3L Figure 16. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.